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Received February 27, 2014
Accepted August 5, 2014
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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A conical shape-evolution model for the control of sapphire crystal growth in Kyropoulos (KY) method
1Department of Chemical Engineering, The University of Seoul, 163, Siripdae-ro, Dongdaemun-gu, Seoul 130-743, Korea 2Siltron Inc., 164-2, Simi-dong, Gumi, Gyeongbuk 730-724, Korea 3Institute of Gas Safety R&D, Korea Gas Safety Corporation, 1390, Wonjung-ro, Eumseong-gun, Chungbuk 369-811, Korea
hkim@uos.ac.kr
Korean Journal of Chemical Engineering, March 2015, 32(3), 486-493(8), 10.1007/s11814-014-0226-9
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Abstract
Generally, the process of sapphire crystal growing in the KY furnace has to be monitored in order to reduce the power of heater continuously as the crystal grows to occupy the crucible. However, it has been difficult to control the heater power as the weight and diameter of crystal change because the solid-liquid interface could not be easily located from on-site measurement. Hence, first, the model was developed to locate the crystal-melt interface and to estimate its dynamic feature during the crystal growth by incorporating the mass and the force balances. This model_x000D_
was applied to analyze the data obtained from the industry-scale crystal growth experiment (for the production of the sapphire crystals in the KY method). Finally, the shape and the dynamic feature of crystallizing front are analytically verified by generating some bands of small bubbles along the crystal-melt interface called a comb-pattern experiment.
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References
Akselrod MS, Bruni FJ, J. Cryst. Growth, 360, 134 (2012)
Dan’ko AY, Sidel’nikova NS, Adonkin GT, Budnikov AT, Nizhankovskii SV, Krivonogov SI, Crystallography Report, 49, 240 (2004)
Vishnevskii SD, Krivonosov EV, Litvinov LA, Crystallography Report, 53, 154 (2008)
Dobrovinskaya ER, Lytvynov LA, Pishchik V, Sapphire: Material, Manufacturing, Applications, Springer, Berlin (2009)
Demina SE, Bystrova EN, Postoov VS, Eskov EV, Nikolenko MV, Marshanin DA, Yuferev VS, Kalaev VV, J. Cryst. Growth, 310(7-9), 1443 (2008)
Demina SE, Kalaev VV, J. Cryst. Growth, 320(1), 23 (2011)
Chen CH, Chen JC, Lu CW, Liu CM, J. Cryst. Growth, 318(1), 162 (2011)
Chen CH, Chen JC, Lu CW, Liu CM, J. Cryst. Growth, 352(1), 9 (2012)
Xu CH, Zhang MF, Meng SH, Han JC, Wang GG, Zuo HB, Cryst. Res. Technol., 42, 751 (2007)
Zhang L, Zuo H, Sun J, Wang X, Han J, Xing D, Cryst. Res. Technol., 46, 1019 (2011)
Zhang L, Zuo H, Sun J, Xing D, Han J, Wang X, Cryst. Res. Technol., 47, 175 (2012)
Institute for Single Crystal (www.isc.kharkov.com).
Davis SH, Theory of solidification, Cambridge University Press, UK (2001)
Song DW, Ji ES, Choi YK, Jo HJ, Kim YH, US Patent, 8,349,075 (2013)
DK AzTEK (www.dkaztec.com).
Bianchi MV, Viskanta R, Int. J. Heat Mass Transf., 40(9), 2035 (1997)
Tarzia DA, MAT. Series A, 2, 1 (2000)
Dan’ko AY, Sidel’nikova NS, Adonkin GT, Budnikov AT, Nizhankovskii SV, Krivonogov SI, Crystallography Report, 49, 240 (2004)
Vishnevskii SD, Krivonosov EV, Litvinov LA, Crystallography Report, 53, 154 (2008)
Dobrovinskaya ER, Lytvynov LA, Pishchik V, Sapphire: Material, Manufacturing, Applications, Springer, Berlin (2009)
Demina SE, Bystrova EN, Postoov VS, Eskov EV, Nikolenko MV, Marshanin DA, Yuferev VS, Kalaev VV, J. Cryst. Growth, 310(7-9), 1443 (2008)
Demina SE, Kalaev VV, J. Cryst. Growth, 320(1), 23 (2011)
Chen CH, Chen JC, Lu CW, Liu CM, J. Cryst. Growth, 318(1), 162 (2011)
Chen CH, Chen JC, Lu CW, Liu CM, J. Cryst. Growth, 352(1), 9 (2012)
Xu CH, Zhang MF, Meng SH, Han JC, Wang GG, Zuo HB, Cryst. Res. Technol., 42, 751 (2007)
Zhang L, Zuo H, Sun J, Wang X, Han J, Xing D, Cryst. Res. Technol., 46, 1019 (2011)
Zhang L, Zuo H, Sun J, Xing D, Han J, Wang X, Cryst. Res. Technol., 47, 175 (2012)
Institute for Single Crystal (www.isc.kharkov.com).
Davis SH, Theory of solidification, Cambridge University Press, UK (2001)
Song DW, Ji ES, Choi YK, Jo HJ, Kim YH, US Patent, 8,349,075 (2013)
DK AzTEK (www.dkaztec.com).
Bianchi MV, Viskanta R, Int. J. Heat Mass Transf., 40(9), 2035 (1997)
Tarzia DA, MAT. Series A, 2, 1 (2000)
