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Received August 24, 2014
Accepted October 29, 2014
- This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Wet chemical synthesis of WO3 thin films for supercapacitor application
Nanasaheb Madhukar Shinde†
Ajay Dattu Jagadale1
Vijay Shamrao Kumbhar1
Tanka Raj Rana
JunHo Kim
Dnyandev Lokhande1†
Department of Physics, Incheon National University, Korea 1Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India, Korea
nanashinde2009@gmail.com
Korean Journal of Chemical Engineering, May 2015, 32(5), 974-979(6), 10.1007/s11814-014-0323-9
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Abstract
Tungstic oxide (WO3) thin films have been synthesized by wet chemical method, i.e., successive ionic layer adsorption and reaction (SILAR) method. These films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. The XRD pattern revealed the formation of polycrystalline WO3 films. Scanning electron micrographs demonstrate the three-dimensional aggregated irregular extended rod shaped morphology of WO3 thin films. The WO3 film showed a direct band gap of 2.5 eV. The WO3 film exhibited specific capacitance of 266 F·g-1 in 1M Na2SO4 electrolyte at the scan rate of 10mVs-1.
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Kumbhar VS, Jagadale AD, Shinde NM, Lokhande CD, Appl. Surf. Sci., 259, 39 (2012)
Wang Y, Shi Z, Huang Y, Ma Y, Wang C, Chen C, Chen M, J. Phys. Chem. C., 113, 13103 (2009)
Meher SK, Rao GR, J. Phys. Chem C., 115, 15646 (2011)
Hinokuma K, Kishimoto A, Kudo T, J. Electrochem. Soc., 141(4), 876 (1994)
Granqvist CG, Handbook of inorganic electrochromic materials, Elsevier, Amsterdam (1995)
Sunu SS, Prabu E, Jayaraman V, Gnanasekar KI, Gnanasekaran T, Sens. Actuators, B., 94, 189 (2003)
Granqvist CG, Sol. Energy Mater. Sol. Cells, 60(3), 201 (2000)
Tocchetto A, Glisenti A, Langmuir, 16(15), 6173 (2000)
Bathe SR, Patil PS, Smart Mater. Struct., 18, 025004 (2009)
Zhuang L, Xu X, Shen H, Surf. Coat. Technol., 167, 217 (2003)
Kalagi SS, Mali SS, Dalavi DS, Inamdar AI, Im H, Patil PS, Electrochim. Acta, 85, 501 (2012)
Mitsugi F, Hirawa E, Ikegami T, Ebihara K, Kumar R, Jpn. J. Appl. Phys., 41, 5372 (2002)
Santucci S, Lozzi L, Passacantando M, Nardo S, Phani A, J. Vac. Sci. Technol. A., 2, 17 (1999)
Xu XQ, Shen H, Xiong XY, Thin Solid Films, 415(1-2), 290 (2002)
Todorovski T, Najdoski M, Mater. Res. Bull., 42(12), 2025 (2007)
Kharade RR, Patil KR, Patil PS, Bhosale PN, Mater. Res. Bull., 47(7), 1787 (2012)
Yang B, Li HJ, Blackford M, Luca V, Curr. Appl. Phys., 6(3), 436 (2006)
Patil PS, Patil PR, Ennaoui EA, Thin Solid Films, 370(1-2), 38 (2000)
Deepa M, Saxena TK, Singh DP, Sood KN, Agnihotry SA, Electrochim. Acta, 51(10), 1974 (2006)
Ren XB, Lu HY, Lin HB, Liu YN, Xing Y, Russ. J. Electrochem., 46, 1 (2010)
Yoon S, Kang E, Kim JK, Lee CW, Lee J, Chem. Commun., 47, 1021 (2011)
Chang KH, Hu CC, Huang CM, Liu YL, Chang CI, J. Power Sources, 196(4), 2387 (2011)
Hodes G, Chemical solution deposition of semiconductor films, Marcel Dekker, New York, 395, 40 (2002)
Zou XX, Li GD, Wang PP, Su J, Zhao J, Zhou LJ, Wanga YN, Chen JS, Dalton Trans., 41, 9773 (2012)
Hieu NV, Vuong HV, Duy NV, Hoa ND, Sens. Actuators, B, 171, 760 (2012)
Shinde NM, Deshmukh PR, Patil SV, Lokhande CD, Mater. Res. Bull., 48(5), 1760 (2013)
Miyauchi M, Phys. Chem. Chem. Phys., 10, 6258 (2008)
Santiago F, Belmonte G, Noem J, Ferriols S, Bueno P, Longo E, Anto J, Garc S, J. Electrochem. Soc., 7, 148 (2001)
Kumbhar VS, Jagadale AD, Shinde NM, Lokhande CD, Appl. Surf. Sci., 259, 39 (2012)