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In relation to this article, we declare that there is no conflict of interest.
Publication history
Received August 24, 2014
Accepted October 29, 2014
articles This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Wet chemical synthesis of WO3 thin films for supercapacitor application

Department of Physics, Incheon National University, Korea 1Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India, Korea
nanashinde2009@gmail.com
Korean Journal of Chemical Engineering, May 2015, 32(5), 974-979(6), 10.1007/s11814-014-0323-9
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Abstract

Tungstic oxide (WO3) thin films have been synthesized by wet chemical method, i.e., successive ionic layer adsorption and reaction (SILAR) method. These films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. The XRD pattern revealed the formation of polycrystalline WO3 films. Scanning electron micrographs demonstrate the three-dimensional aggregated irregular extended rod shaped morphology of WO3 thin films. The WO3 film showed a direct band gap of 2.5 eV. The WO3 film exhibited specific capacitance of 266 F·g-1 in 1M Na2SO4 electrolyte at the scan rate of 10mVs-1.

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