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Received October 22, 2016
Accepted November 12, 2016
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Iron oxide grown by low-temperature atomic layer deposition
School of Chemical Engineering, Chonnam National University, 300 Youngbong-dong, Gwangju 61186, Korea 1Center for Vacuum, Korea Research Institute of Standards and Science, 267 Gajeong-ro, Daejeon 34113, Korea
kdhh@chonnam.ac.kr
Korean Journal of Chemical Engineering, December 2016, 33(12), 3516-3522(7), 10.1007/s11814-016-0319-8
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Abstract
Atomic layer deposition (ALD) is a promising technology for fabricating conformal thin films of atomlevel thickness with chemical composition control over a variety of structures. This paper demonstrates the ALD of iron oxide thin films using a novel iron precursor, namely, bis[bis(trimethylsilyl)amide]iron [Fe(btmsa)2] and hydrogen peroxide as an oxygen source. The growth characteristics of iron oxide were investigated by varying the deposition temperatures from 100 to 225 °C, such that the ALD growth mode was observed at 150 to 175 °C with an average growth rate of 0.035±0.005 nm/cycle. The films deposited in ALD mode exhibited highly linear film thicknesses with the number of cycles and excellent conformality over high-aspect-ratio trenches. In addition, the deposited films were extremely pure and revealed a hematite phase without any subsequent heat treatment, even if the films were deposited at low temperatures.
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References
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Martinson ABF, Devries MJ, Libera JA, Christensen ST, Hupp JT, Pellin MJ, Elam JW, J. Phys. Chem. C, 115(10), 4333 (2011)
Rooth M, Johansson A, Kukli K, Aarik J, Boman M, Harsta A, Chem. Vap. Deposition, 14(3-4), 67 (2008)
Riha SC, Racowski JM, Lanci MP, Klug JA, Hock AS, Martinson ABF, Langmuir, 29(10), 3439 (2013)
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Bachmann J, Jing J, Knez M, Barth S, Shen H, Mathur S, Gosele U, Nielsch K, J. Am. Chem. Soc., 129(31), 9554 (2007)
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Libera JA, Hryn JN, Elam JW, Chem. Mater., 23(8), 2150 (2011)
Hausmann DM, Gordon RG, J. Cryst. Growth, 249(1-2), 251 (2003)
Sambandam B, Surenjan A, Philip L, Pradeep T, ACS Sustainable Chem. Eng., 3(7), 1321 (2015)
Karakalos S, Siokou A, Ladas S, Appl. Surf. Sci., 255(21), 8941 (2009)
Kim DH, Kim JJ, Park JW, Kim JJ, J. Electrochem. Soc., 143(9), L188 (1999)
McIntyre NS, Zetaruk DG, Anal. Chem., 49(11), 1521 (1977)
Grosvenor AP, Kobe BA, Biesinger MC, McIntyre NS, Surf. Interface Anal., 36(12), 1564 (2004)
