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In relation to this article, we declare that there is no conflict of interest.
Publication history
Received May 26, 2015
Accepted September 19, 2015
articles This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Semi-transparent thin film solar cells by a solution process

1Clean Energy Research Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Seongbuk-gu, Seoul 02792, Korea 2Korea University of Science and Technology, 176, Gajeong-dong, 217, Gajeong-ro, Yuseong-gu, Daejeon 34132, Korea 3, Korea
bkmin@kist.re.kr
Korean Journal of Chemical Engineering, March 2016, 33(3), 880-884(5), 10.1007/s11814-015-0200-1
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Abstract

Easily processed, low cost, and highly efficient solar cells are desirable for photovoltaic conversion of solar energy to electricity. We present the fabrication of precursor solution processed CuInGaS2 (CIGS) thin film solar cells on transparent indium tin oxide (ITO) substrates. The CIGS absorber film was prepared by a spin-coating method, followed by two successive heat treatment processes. The first annealing process was on a hot plate at 300 oC for 30 min in air to remove carbon impurities in the film; this was followed by a sulfurization process at 500 oC in an H2S(1%)/Ar environment to form a polycrystalline CIGS film. The absorber film with an optical band-gap of 1.52 eV and a thickness of about 1.1 μm was successfully synthesized. Because of the usage of a transparent glass substrate, a bifacial CIGS thin film device could be achieved; its power conversion efficiency was measured to be 6.64% and 0.96% for front and rear illumination, respectively, under standard irradiation conditions.

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