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In relation to this article, we declare that there is no conflict of interest.
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Received February 12, 2016
Accepted April 7, 2016
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Formation and characterization of CuInSe2 thin films from binary CuSe and In2Se3 nanocrystal-ink spray

School of Chemical Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsan 38541, Korea 1Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, U.S.A., USA
Korean Journal of Chemical Engineering, August 2016, 33(8), 2486-2491(6), 10.1007/s11814-016-0097-3
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Abstract

CuInSe2 (CISe) thin films were grown on Mo-coated glass substrates by spray coating technique using nanocrystalline ink. The ink was prepared by dissolving binary CuSe and In2Se3 nanoparticles in iso-butanol. The grown films were subsequently annealed in vacuum and selenium atmosphere, and examined by various characterization techniques. The vacuum-annealed films showed the CuSe binary phase along with the CuInSe2 phase, whereas the selenized films showed a single phase CuInSe2. The elemental analysis of the selenized film exhibited near stoichiometry, and the photoluminescence peak was observed in the region of band-to-band transitions (0.97 eV), which indicated the good structural quality of the selenized films. The developed method opens a new prospect for the finetuning of CISe composition by pre-adjusting the composition of each element in the binary to best fit of CISe in the photovoltaic devices.

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