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Received July 4, 2017
Accepted August 9, 2017
articles This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Expanding depletion region via doping: Zn-doped Cu2O buffer layer in Cu2O photocathodes for photoelectrochemical water splitting

1Department of Chemical and Biomolecular Engineering (BK21+ Program), KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea 2Carbon Convergence Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Wanju, Jeollabukdo 55324, Korea 3Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea 4Department of Extreme Energy Engineering, Konkuk University, Seoul 27478, Korea
dclee@kaist.edu
Korean Journal of Chemical Engineering, December 2017, 34(12), 3214-3219(6), 10.1007/s11814-017-0225-8
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Abstract

We report photoelectrochemical hydrogen evolution reaction using a Cu2O-based photocathode with a layer doped with Zn ions. The doping results in the shift of the onset flat-band potential of the photocathode, likely a consequence of maximized band-bending in the Cu2O/Zn : Cu2O heterojunction. Systematic electrochemical analysis reveals that expansion of depletion region is responsible for the enhanced photoelectrochemical performance, e.g., the increase of photocurrent and reduced internal resistance.

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