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Language: English

Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received November 1, 2016
Accepted February 27, 2017

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Cu seed layer damage caused by insoluble anode in Cu electrodeposition

Yu Seok Ham Sung Ki Cho^1† Jae Jeong Kim^†

School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Gwanak 1, Gwanak-ro, Gwanak-gu, Seoul 08826, Korea ¹Department of Energy and Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do 39177, Korea

chosk@kumoh.ac.kr

Korean Journal of Chemical Engineering, May 2017, 34(5), 1490-1494(5), 10.1007/s11814-017-0054-9

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Abstract

We verified that a Cu seed layer could be damaged by a Pt insoluble anode in Cu electrodeposition. When the Cu seed layer was connected to the Pt galvanically, it was pitted and became resistive. The existence of Pt oxides on the Pt developed a potential with respect to the Cu seed layer, and accompanying electron flow from the Cu seed layer to the Pt insoluble anode. This resulted in the dissolution of the Cu seed layer, and the reduction of Pt oxides, which was confirmed by XPS analysis. The pitting current increased with the oxidation time and the surface area of the Pt, indicating the dissolution current on the Cu seed layer was associated with the Pt oxides on the Pt. This study implies that it is necessary to reduce the Pt anode regularly to prevent the Cu seed damage by the Pt anode in Cu electrodeposition.

Keywords

Cu Electrodeposition Galvanostatic Condition Pitting Corrosion Cu Seed Layer Damage Insoluble Anode

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