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Received May 23, 2017
Accepted September 5, 2017
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Effects of growth temperature on titanium carbide (TiC) film formation using low-frequency (60 Hz) plasma-enhanced chemical vapor deposition
School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Korea 1Department of Physics, Kyungpook National University, Daegu 41566, Korea
Korean Journal of Chemical Engineering, January 2018, 35(1), 246-250(5), 10.1007/s11814-017-0243-6
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Abstract
TiC films were formed by low-frequency (60Hz) plasma-enhanced chemical vapor deposition (LFPECVD) using TiCl4, CH4, and H2 gas mixtures. The effects of the growth temperature and feasibility for the on-glass deposition of TiC films were investigated. The growth kinematics of TiC films was controlled mainly by surface-reactions below 450 °C, and dominated by a mass-transfer process above 450 °C. The films exhibited a face-centered cubic structure, and the preferred orientation of film growth was mainly the (200) plane. The [C]/[Ti] ratio was over-stoichiometric below 400 °C, and became almost stoichiometric above 450 °C. The optical properties of the films were characterized by high reflectance in near infrared (NIR) region and a steep edge in the visible region, and the reflectance in the NIR region increased gradually with increasing temperature. As a result, LF-PECVD is a useful technique to acquire Cl-free TiC films at relatively low temperatures.
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