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Received October 28, 2017
Accepted February 12, 2018
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma
1School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea 2School of Semiconductor & Display Engineering, Sungkyunkwan University, Suwon 16419, Korea 3Display Laboratory, Samsung Institute of Technology, Yongin 17113, Korea
sungmcho@skku.edu
Korean Journal of Chemical Engineering, June 2018, 35(6), 1348-1353(6), 10.1007/s11814-018-0034-8
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Abstract
Plasma damage of indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) was investigated. The IGZO TFT was fabricated and the performance was measured before and after BCl3 and/or Cl2 plasma treatment to evaluate the IGZO damage. The BCl3 and/or Cl2 plasma deteriorated the IGZO TFT performance significantly even after a short exposure time in the plasma. We propose a new wet etching process to remove a source/drain metal without damaging the underlying IGZO layer. The wet etching process can be utilized for the fabrication of IGZO TFT array using a roll-to-roll process via a self-aligned imprint lithography technique.
References
Fortunato E, Barquinha P, Martins R, Adv. Mater., 24, 2945 (2014)
Kamiya T, Nomura K, Hosono H, Sci. Technol. Adv. Mater., 11, 044305 (2010)
Park JS, Maeng WJ, Kim HS, Park JS, Thin Solid Films, 520(6), 1679 (2012)
Bak JY, Yang S, Ryu MK, Park SHK, Hwang CS, Yoon SM, ACS Appl. Mater. Interfaces, 4, 5369 (2012)
Kim HJ, Almanza-Workman M, Garcia B, Kwon O, Jeffrey F, Braymen S, et al., J. SID, 17, 963 (2009)
Li S, Chu D, Flex. Print. Electron., 2, 013002 (2017)
Lausecker E, Huang Y, Fromherz T, Sturm JC, Wagner S, Appl. Phys. Lett., 96, 263501 (2010)
Mei P, Almanza-Workman M, Chaiken A, Cobene RL, Elder R, et al., J. Nanosci. Nanotechnol., 10, 7419 (2010)
Park JS, Jeong JK, Mo YG, Kim HD, Kim SI, Appl. Phys. Lett., 90, 262106 (2007)
Kim JS, Joo MK, Piao MX, Ahn SE, Choi YH, Jang HK, Kim GT, J. Appl. Phys., 115, 114503 (2014)
Nayak PK, Hedhili MN, Cha D, Alshareef HN, Appl. Phys. Lett., 100, 202106 (2012)
Park W, Whang KW, Yoon YG, Kim JH, Rha SH, Hwang CS, Appl. Phys. Lett., 99, 062110 (2011)
Joo YH, Woo JC, Kim CI, J. Electrochem. Soc., 159(4), D190 (2012)
Kamiya T, Nomura K, Hosono H, Sci. Technol. Adv. Mater., 11, 044305 (2010)
Park JS, Maeng WJ, Kim HS, Park JS, Thin Solid Films, 520(6), 1679 (2012)
Bak JY, Yang S, Ryu MK, Park SHK, Hwang CS, Yoon SM, ACS Appl. Mater. Interfaces, 4, 5369 (2012)
Kim HJ, Almanza-Workman M, Garcia B, Kwon O, Jeffrey F, Braymen S, et al., J. SID, 17, 963 (2009)
Li S, Chu D, Flex. Print. Electron., 2, 013002 (2017)
Lausecker E, Huang Y, Fromherz T, Sturm JC, Wagner S, Appl. Phys. Lett., 96, 263501 (2010)
Mei P, Almanza-Workman M, Chaiken A, Cobene RL, Elder R, et al., J. Nanosci. Nanotechnol., 10, 7419 (2010)
Park JS, Jeong JK, Mo YG, Kim HD, Kim SI, Appl. Phys. Lett., 90, 262106 (2007)
Kim JS, Joo MK, Piao MX, Ahn SE, Choi YH, Jang HK, Kim GT, J. Appl. Phys., 115, 114503 (2014)
Nayak PK, Hedhili MN, Cha D, Alshareef HN, Appl. Phys. Lett., 100, 202106 (2012)
Park W, Whang KW, Yoon YG, Kim JH, Rha SH, Hwang CS, Appl. Phys. Lett., 99, 062110 (2011)
Joo YH, Woo JC, Kim CI, J. Electrochem. Soc., 159(4), D190 (2012)
