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Received September 6, 2018
Accepted November 17, 2018
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Effect of substrate off-orientation on the characteristics of GaInP/AlGaInP single heterojunction solar cells
Department of Energy and Mineral Resources Engineering, Sejong University, Seoul 05006, Korea 1Korea Advanced Nano Fabrication Center, Suwon, Gyeonggi-do 16229, Korea
junghwan@sejong.ac.kr
Korean Journal of Chemical Engineering, February 2019, 36(2), 305-311(7), 10.1007/s11814-018-0195-5
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Abstract
The effects of GaAs substrate off-orientation on GaInP/AlGaInP heterojunction solar cells were investigated. The performances of solar cells fabricated on 2° and 10° off GaAs substrates were compared. The short circuit current densities were 10.44 mA/cm2 for the 10° off sample, 7.15 mA/cm2 and 7.41 mA/cm2 for the 2° off samples, which showed 30% higher short-circuit current density for 10o off samples. Also, 30% higher external quantum efficiencies and smooth surface morphology were observed in the solar cell fabricated on the 10° off GaAs substrate. Secondary ion mass spectrometry depth profiles showed that the solar cells on 2° off substrates had a 20-times higher oxygen concentration than the solar cells on 10o off GaAs substrate in the n-GaAs/GaAs buffer layer. The 30% reduction for the solar cells on 2° substrates in short circuit current density (Jsc) was attributed to the higher oxygen concentration of the 2° off samples than the 10° off samples. I-V characteristics comparison between different front contact grid patterns was also performed for optimization of grid contacts. A 0.47 V bandgap-voltage offset, one of the device performance figures of merit to compare PV cells with different materials, was obtained.
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Chand N, Jordan AS, Chu SNG, Appl. Phys. Lett., 59, 3270 (1991)
Kondo M, Okada N, Domen K, Sugiura K, Anayama C, Tanahashi T, J. Electron. Mater., 23, 355 (1994)
Xiang N, Tukiainen A, Pessa M, J. Electron. Mater., 13, 549 (2002)
Yu HW, Chang EY, Nguyen HQ, Chang JT, Chung CC, Kuo CI, Wong YY, Wang WC, Appl. Phys. Lett., 97, 2008 (2010)
Hata M, Takata H, Yako T, Fukuhara N, Maeda T, Uemura Y, J. Cryst. Growth, 124, 427 (1992)
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Gomyo A, Suzuki T, Iijima S, Phys. Rev. Lett., 60, 2645 (1988)
Zafar M, Yun JY, Kim DH, Korean J. Chem. Eng., 34(5), 1504 (2017)
