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Received November 16, 2019
Accepted December 16, 2019
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Al-doped zinc stannate films for photovoltaic applications
Hyunmin Jung
Youngsang Park
Sreedevi Gedi
Vasudeva Reddy Minnam Reddy
Gérald Ferblantier1
and Woo Kyoung Kim†
School of Chemical Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsan 38541, Korea 1ICube, CNRS-Université de Strasbourg, UMR 7357 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2, France
Korean Journal of Chemical Engineering, April 2020, 37(4), 730-735(6), 10.1007/s11814-019-0468-7
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Abstract
Al-doped zinc stannate (Zn2SnO4 : Al or Zn-Sn-O: Al or AZTO) has attracted considerable attention as a next-generation transparent conducting oxide (TCO) owing to its properties. In this study, AZTO films were deposited by co-sputtering Al-doped zinc oxide (AZO) and SnO2 targets at room temperature. The as-deposited AZTO films were confirmed to be satisfactorily adherent with good uniformity. These films had an average transmittance of over 80%, energy band gap of >3.5 eV, and relatively low electrical resistivity of 1.29 X 10-1Ω cm. The composition ratio of Zn/Sn at 140 W of SnO2 power was approximately 2, indicating the formation of AZTO film with stoichiometric composition of Zn2SnO4 : Al at this power. Further, the Cu(InGa)Se2 (CIGS) device fabricated with AZTO (140W) as a TCO exhibited an efficiency of 0.73%, with a VOC of 0.51V, JSC of 3.76 mA/cm2, and FF of 38.4%. Furthermore, the conversion efficiency of CIGS cell was enhanced to 2.82% by employing the AZTO film deposited at the elevated temperature of 350 °C.
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