Articles & Issues
- Language
- English
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received February 10, 2022
Accepted June 6, 2022
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
Dissolution of copper and copper oxide in aqueous solution containing
Gangwon Institute for Regional Program Evaluation, 1, Kangwondaehak-gil, Chuncheon, Gangwon 24341, Korea 1Division of Chemical Engineering and Bioengineering, Kangwon National University, 1, Kangwondaehak-gil, Chuncheon, Gangwon 24341, Korea
wglee@kangwon.ac.kr
Korean Journal of Chemical Engineering, November 2022, 39(11), 3121-3128(8), 10.1007/s11814-022-1200-6
Download PDF
Abstract
Using a component having an amine group (-NH2) or a carboxyl group (-COOH) for a cleaning solution, the etching rates of copper oxide and copper were analyzed by measuring the solubility of copper to evaluate the etch residue removal properties. Based on this, it was attempted to establish the basis of a cleaning process for removing etch residues in the copper back end of line (BEOL) process. In addition, the etch rate and surface structure change of fluorine-doped fluorosilicate glass (FSG), Black Diamond (BD), and methyl group-doped organosilicate glass (OSG), which are low-k dielectric materials, were analyzed. The copper oxide etching rate of the component having an amine group showed a tendency to increase as the basicity of the solution increased. Also, the solubility of copper oxide in the amine solution decreased with the increase of the carbon length in the amine molecular structure. The solution having a carboxyl group compared to the amine group has a high etching rate for the low-k dielectric material. The amine component showed reactivity only in the basic region and, on the contrary, the carboxyl group component is reactive only in the acidic region.
References
Martinez MA, Soild State Technol., 37, 26 (1994)
Shamiryan D, Abell T, Lacopi F, Maex K, Mater. Today, 7, 34 (2004)
Zheng YS, Guo Q, Su YJ, Foo PD, Microelectron. J., 34, 109 (2003)
Lu D, Kumar R, Chang CK, Du AY, Wong TKS, Microelectron. Eng., 77, 63 (2005)
Wang Y, Graham SW, Chan L, Loong S, J. Electrochem. Soc., 144, 1522 (1997)
Maruyama T, Fujiwara N, Siozawa K, Yoneda M, Jpn. J. Appl. Phys., 35, 2463 (1996)
Baggerman JAG, Visser RJ, Collaert EJH, J. Appl. Phys., 75, 758 (1994)
Ohmi T, J. Electrochem. Soc., 143, 2957 (1996)
Loewenstein LM, Mertens PW, J. Electrochem. Soc., 146, 3886 (1999)
Cady WA, Varadarajan M, J. Electrochem. Soc., 143, 2064 (1996)
Reinhardt KA, Kern W, Handbook of silicon wafer cleaning technology, 3rd ed., Elsevier (2018).
Venkataraman N, Raghavan S, Microelectron. Eng., 87, 1689 (2010)
Ko CK, Lee WG, Korean Chem. Eng. Res., 54, 548 (2016)
Ko CK, Lee WG, Korean Chem. Eng. Res., 59, 632 (2021)
Sircar SC, Wiled DR, J. Electrochem. Soc., 107, 164 (1960)
Aksu S, Doyle FM, J. Electrochem. Soc., 149, B340 (2002)
Sircar SC, Wiled DR, J. Electrochem. Soc., 107, 367 (1960)
Carter MK, Small E, Cernat M, Hansen B, J. Electrochem. Soc., 150, B52 (2003)
Wu YF, Tsai TH, Microelectron. Eng., 84, 2790 (2007)
Gorantla VRK, Babel A, Pandija S, Babu SV, Electrochem. Solid State Lett., 8, G131 (2005)
Gorantla V, Goia D, Matijević E, Babu SV, J. Electrochem. Soc., 152, G912 (2005)
Aksu S, Doyle FM, J. Electrochem. Soc., 149, B340 (2002)
Ko CK, Lee WG, Surf. Interface Anal., 44, 94 (2012)
Ko CK, Lee WG, Surf. Interface Anal., 42, 1128 (2010)
Ding ZJ, Wang YP, Liu WJ, Ding SJ, Baklanov MR, Zhang DW, J. Phys. D-Appl. Phys., 51, 115103 (2018)
Shamiryan D, Abell T, Lacopi F, Maex K, Mater. Today, 7, 34 (2004)
Zheng YS, Guo Q, Su YJ, Foo PD, Microelectron. J., 34, 109 (2003)
Lu D, Kumar R, Chang CK, Du AY, Wong TKS, Microelectron. Eng., 77, 63 (2005)
Wang Y, Graham SW, Chan L, Loong S, J. Electrochem. Soc., 144, 1522 (1997)
Maruyama T, Fujiwara N, Siozawa K, Yoneda M, Jpn. J. Appl. Phys., 35, 2463 (1996)
Baggerman JAG, Visser RJ, Collaert EJH, J. Appl. Phys., 75, 758 (1994)
Ohmi T, J. Electrochem. Soc., 143, 2957 (1996)
Loewenstein LM, Mertens PW, J. Electrochem. Soc., 146, 3886 (1999)
Cady WA, Varadarajan M, J. Electrochem. Soc., 143, 2064 (1996)
Reinhardt KA, Kern W, Handbook of silicon wafer cleaning technology, 3rd ed., Elsevier (2018).
Venkataraman N, Raghavan S, Microelectron. Eng., 87, 1689 (2010)
Ko CK, Lee WG, Korean Chem. Eng. Res., 54, 548 (2016)
Ko CK, Lee WG, Korean Chem. Eng. Res., 59, 632 (2021)
Sircar SC, Wiled DR, J. Electrochem. Soc., 107, 164 (1960)
Aksu S, Doyle FM, J. Electrochem. Soc., 149, B340 (2002)
Sircar SC, Wiled DR, J. Electrochem. Soc., 107, 367 (1960)
Carter MK, Small E, Cernat M, Hansen B, J. Electrochem. Soc., 150, B52 (2003)
Wu YF, Tsai TH, Microelectron. Eng., 84, 2790 (2007)
Gorantla VRK, Babel A, Pandija S, Babu SV, Electrochem. Solid State Lett., 8, G131 (2005)
Gorantla V, Goia D, Matijević E, Babu SV, J. Electrochem. Soc., 152, G912 (2005)
Aksu S, Doyle FM, J. Electrochem. Soc., 149, B340 (2002)
Ko CK, Lee WG, Surf. Interface Anal., 44, 94 (2012)
Ko CK, Lee WG, Surf. Interface Anal., 42, 1128 (2010)
Ding ZJ, Wang YP, Liu WJ, Ding SJ, Baklanov MR, Zhang DW, J. Phys. D-Appl. Phys., 51, 115103 (2018)
