Articles & Issues

Language: English

Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received August 7, 2023
Accepted November 21, 2023

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

All issues

Hydrogen Plasma-Assisted Atomic Layer Deposition of Ru with Low Oxygen Contentv

Geonwoo Park Keunhoi Kim Jeong Woo Shin^{1 2} Geongu Han Dohyun Go^3† Jihwan An^{1 4†}

Department of Manufacturing Systems and Design Engineering (MSDE) , Seoul National University of Science and Technology ¹Energy and Environment Research Institute , Seoul National University of Science and Technology ²Department of Mechanical and Aerospace Engineering , Nanyang Technological University ³Department of Chemistry and Biochemistry , University of California San Diego ⁴Department of Mechanical Engineering , Pohang University of Science and Technology (POSTECH)

Korean Journal of Chemical Engineering, April 2024, 41(4), 1249-1254(6), https://doi.org/10.1007/s11814-024-00035-2

Abstract

Ru is extensively used in electrical and energy applications because of its high electrical conductivity and catalytic activity.

This study reports the H 2 plasma-enhanced atomic layer deposition (PEALD) of Ru thin fi lms using a novel carbonyl

cyclohexadiene ruthenium precursor. The optimized process conditions for depositing Ru thin fi lms by PEALD were established

based on the growth per cycle (GPC), chemical formation, crystallinity, conformality, and resistivity, according to

process parameters such as precursor pulse time, H 2 plasma pulse time, purge time, and deposition temperature. Pure Ru

thin fi lms (low carbon and oxygen) were deposited with low resistivity (30.8 μΩ cm) and showed high conformality (> 95%)

on the Si trenches. The oxidant-free PEALD Ru process reported in this study may have implications on the fabrication of

high-quality interfaces between Ru and easily-oxidized substrates.

Keywords

Plasma enhanced atomic layer deposition · Ruthenium · Hydrogen plasma · Electrode · Catalyst