ISSN: 0256-1115 (print version) ISSN: 1975-7220 (electronic version)
Copyright © 2024 KICHE. All rights reserved

Articles & Issues

Language
English
Conflict of Interest
In relation to this article, we declare that there is no conflict of interest.
articles This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.

All issues

SIMULATION OF SILICON FILM GROWTH BY SILANE DECOMPOSITION IN A MERCURY-SENSITIZED PHOTO-CVD PROCESS

Korean Journal of Chemical Engineering, January 1992, 9(1), 29-36(8), 10.1007/BF02697409
downloadDownload PDF

Abstract

Deposition of silicon film by a mercury-sensitized photo-CVD process has been simulated by numerical solution of governing equations with proper boundary conditions. The results indicate that the film deposition rate is controlled by homogeneous decomposition of the reactant, silane, in the gas phase. The growth rate increases but the film uniformity decreases with the increase of reactant inlet concentration. Increase in the reactant flow rate decreases the deposition rate but gives no effect on the film uniformity. Among process variables, the light intensity and the mercury-saturator temperature are important parameters.

Keywords

References

Kenne J, Yamada A, Konagai M, Takahashi K, Jpn. J. Appl. Phys., 24, 997 (1985) 
Tarui Y, Hidaka J, Aota K, Jpn. J. Appl. Phys., 23, L827 (1984) 
Toyama M, Itoh H, Moriya T, Jpn. J. Appl. Phys., 25, 679 (1986) 
Emeleus HJ, Stewart K, Trans. Faraday Soc., 32, 1577 (1936) 
Kamaratos E, Lampe FW, J. Phys. Chem., 74, 2267 (1970) 
Austin ER, Lampe FW, J. Phys. Chem., 81, 1134 (1977) 
Perkins GGA, Lampe FW, J. Am. Chem. Soc., 102, 3764 (1980) 
Matsui Y, Yuuki A, Morita N, Tachibana K, Jpn. J. Appl. Phys., 26, 1575 (1987) 
Kmisako K, Imai T, Tarui Y, Jpn. J. Appl. Phys., 27, 1092 (1988) 
Nishida S, Tasaki H, Konagai M, Takahashi K, J. Appl. Phys., 58(4), 1427 (1985) 
Bird RB, Stewart WE, Light EN, "Transport Phenomena," John Wiley and Sons, Inc., New York (1960)
Lee JH, Moon SH, Rhee SW, Korean J. Chem. Eng., to submitted (1991)
Coltrin ME, Lee RJ, Miller JA, J. Electrochem. Soc., 131, 425 (1984) 
Niki H, Mains GJ, J. Phys. Chem., 68, 304 (1964)
Tachibana K, Harima H, Matsui Y, Yuki A, Morita N, Urano Y, J. Phys. D: Appl. Phys., 20, 28 (1987) 
Tompkins FC, "Chemisorption of Gases on Metals," Academic Press, London (1978)
Perrin J, Broekhuizen T, Appl. Phys. Lett., 50, 433 (1987) 
Pun WM, Spalding DB, "A General Computer Program for Two-Dimensional Elliptic Flows," Imperial College of Science and Technology, London (1977)
Patankar SV, "Numerical Heat Transfer and Fluid Flow," Hemisphere Pub. Corporation, Washington (1980)
Abber RL, p. 270, "Handbook of Thin Film Deposition Processes and Techniques (ed. Schuegraf, K.K.)," Noyes Publications, Park Ridge, NJ (1988)

The Korean Institute of Chemical Engineers. F5, 119, Anam-ro, Seongbuk-gu, 233 Spring Street Seoul 02856, South Korea.
TEL. No. +82-2-458-3078FAX No. +82-507-804-0669E-mail : kiche@kiche.or.kr

Copyright (C) KICHE.all rights reserved.

- Korean Journal of Chemical Engineering 상단으로