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SIMULATION OF SILICON FILM GROWTH BY SILANE DECOMPOSITION AT LOW PRESSURES AND TEMPERATURES
Korean Journal of Chemical Engineering, January 1992, 9(1), 8-15(8), 10.1007/BF02697406
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Abstract
Silicon film deposition by silane decomposition in LPCVD(Low Pressure Chemical Vapor Deposition) process has been simulated by numerical computation of the governing transport and reaction equations, assuming that the rate of silane decomposition in the gas phase controls the overall film growth rate. The film growth rate and the film uniformity increase with the reactant flow rate when the flow rate is relatively low, but they decrease at higher flow rates due to the negative effect of the reduced reaction time in the reactor. Accordingly, the film deposition process is optimized by controlling the reactant flow rate so that the position of the maximum SiH4-decomposition rate in the gas phase is located above the substrate region. With a larger degree of the substrate tilting, the growth rate decreases but the film uniformity is improved. The film uniformity is also improved when the pressure is low.
References
Meyerson BS, Gannin E, Smith DA, Nguyen TN, J. Electrochem. Soc., 133, 1232 (1986)
Jensen KF, Graves DB, J. Electrochem. Soc., 130, 1950 (1983)
Coltrin ME, Lee RJ, Miller JA, J. Electrochem. Soc., 131, 425 (1984)
Coltrin ME, Kee RJ, Miller JA, J. Electrochem. Soc., 133, 1206 (1986)
Bird RB, Stewart WE, Light EN, "Transport Phenomena," John Wiley and Sons, Inc., New York (1960)
Viswanathan R, Thompson DL, Raff LM, J. Chem. Phys., 80, 4230 (1984)
White RT, Espino-Rios RL, Rogers DS, Ring MA, O'Neal HE, Int. J. Chem. Kinet., 17, 1029 (1985)
Inoue G, Suzuki M, Chem. Phys. Lett., 122, 361 (1985)
Jasinski JM, J. Phys. Chem., 90, 555 (1986)
Rhee S, Szekely J, J. Electrochem. Soc., 133, 2194 (1986)
Pun WM, Spalding DB, "A General Computer Program for Two-Dimensional Elliptic Flows," Imperial College of Science and Technology, London (1977)
Patanka SV, "Numerical Heat Transfer and Fluid Flow," Hemisphere Pub. Corporation, Washington (1980)
Schlichting H, "Boundary Layer Theory," 6th ed., McGraw-Hill, Inc., New York (1968)
Jensen KF, Graves DB, J. Electrochem. Soc., 130, 1950 (1983)
Coltrin ME, Lee RJ, Miller JA, J. Electrochem. Soc., 131, 425 (1984)
Coltrin ME, Kee RJ, Miller JA, J. Electrochem. Soc., 133, 1206 (1986)
Bird RB, Stewart WE, Light EN, "Transport Phenomena," John Wiley and Sons, Inc., New York (1960)
Viswanathan R, Thompson DL, Raff LM, J. Chem. Phys., 80, 4230 (1984)
White RT, Espino-Rios RL, Rogers DS, Ring MA, O'Neal HE, Int. J. Chem. Kinet., 17, 1029 (1985)
Inoue G, Suzuki M, Chem. Phys. Lett., 122, 361 (1985)
Jasinski JM, J. Phys. Chem., 90, 555 (1986)
Rhee S, Szekely J, J. Electrochem. Soc., 133, 2194 (1986)
Pun WM, Spalding DB, "A General Computer Program for Two-Dimensional Elliptic Flows," Imperial College of Science and Technology, London (1977)
Patanka SV, "Numerical Heat Transfer and Fluid Flow," Hemisphere Pub. Corporation, Washington (1980)
Schlichting H, "Boundary Layer Theory," 6th ed., McGraw-Hill, Inc., New York (1968)
