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반도체 전극을 이용한 태양에너지의 전기화학적 변환

Electrochemical Conversion of Solar Energy with Semiconductor Electrode

이주성 Fujishima A 박정일

Lee JS Fujishima A Park JI

HWAHAK KONGHAK, December 1986, 24(6), 467-474(8), NONE

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Abstract

산성용액중에서 p형 반도체인 인화붕소의 광전기화학적 거동을 연구하였다. p-BP광음극은 band gap이 2.0 eV로 넓은 파장 범위에서 좋은 광응답을 하였으며 광조사시 황산산성용액중에서도 안정하였다. 광조사시 BP광음극으로부터 발생하는 가스는 수소였으며 전류효율은 거의 100 %였었다. BP의 표면에 적당히 루테늄을 처리하면 광전류는 현저하게 증가하였다. 이 p-BP를 사용하여 다음과 같은 광전기화학전지 Pt（H₂）/0.5 M H₂SO₄/p-BP를 구성시켰더니 이의 특성으로서 open-circuit 광전압은 0.45 V였고 short-circuit 광전류 밀도는 2.4 mA.cm^-2였으며 fill factor는 약 25% 였었다.

The photoelectrochemical behavior of p-type boron phosphide（BP） in acidic solution was investigated. The p-BP photocathode had a good wavelength response(E_g=2.0 eV)and was suitable in an sulfuric acid solution under irradiation. The gas evolved from this BP photocathode under irradiation was hydrogen which was produced with a current efficiency of about 100 %. The photocurrent was markedly increased by a suitable surface ruthenium treatment of the BP. A photoelectrochemical cell of the form Pt(H₂)/0.5 M H₂SO₄/p-BP was shown to have an the open-circuit photovoltage of 0.45 V, the short-circuit photocurrent density of 2.4 mA·cm^-2, and the fill factor of 25 %.

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