반도체 재료용 고순도 규소를 제조하기 위한 종형 반응기내에서 TCS와 수소를 원료로 하는 규소증착 반응의 증착 속도에 대한 반응온도, 반응물 가스유량, TCS 농도 등의 영향을 조사하여 규소증착 속도를 예측할 수 있는 경혐식을 제안하였다. 또한 이 경험식과 복사열 절감률을 도입하여 종형 반응기에서의 소비전력을 산출할 수 있는 이론식을 제안하였다. 제안된 식들에 의해 계산된 결과는 실험 결과와 잘 일치함을 확인할 수 있었다.

Experiments of silicon CVD（Chemical Vapor Deposition） using trichlorosilane and hydrogen gas mixture were conducted to determine the deposition rate and power consumption for the bell-jar type reactor used for semiconductor grade polycrystalline silicon manufacture. We studied the effects of reaction temperature, flow rate of reactant gas, and trichlorosilane concentration on the silicon deposition rate experimentally.
An empirical equation to predict the silicon deposition rate was proposed and was compared with experimental data. On the other hand, a model equation to predict power consumption of the bell-jar type reactor was derived from the deposition rate equation and the heat saving equation in the reactor. Predictions by this model were agreed well with experimental data.