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열풀라즈마를 이용한 탄화규소 분말의 합성

Thermal Plasma Synthesis of Silicon Carbide Powders

박혁상 이시우

Park HS Rhee SW

HWAHAK KONGHAK, August 1990, 28(4), 451-457(7), NONE

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Abstract

열플라즈마를 발생시켜 얻은 초고온 아르곤기체에 삼염화메틸사일린[Si(CH₃)Cl₃]과 수소기체를 주입시켜 고온 화학반응에 의해 탄화규소 미세분말을 합성하였다. 이 때 최적 수소 농도는 3-4몰%로 나타났다. 이보다 적은 경우는 미반응 탄소분이 섞인 무정형의 탄소규소가 생성되는 것을 알았으며 큰 경우는 미반응 규소가 생성됨을 알았다. 이 공정에서 얻은 분말은 20-60nm의 크기를 가진 β-탄화규소로 나타났다.

Ultrafine silicon carbide powders were chemically synthesized by introducing trichloromethyl silane and hydrogen into the high temperature thermal plasma argon gas. The optimum concentration of hydrogen was found to be about 3-4mole%. Free carbon was included when the hydrogen concentration was lower than optimum and free silicon was formed when it was higher than optimum. It was also found out that powders synthesized were β-SiC with size distributions between 20 to 60nm.

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References

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