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열 CVD법에 의한 ZnO 박막의 저온 합성에 관한 연구
Preparation of Zinc Oxide Thin Film by Thermal Chemical Vapor Deposition-Synthesis of thin Film from Zinc Acetate-
HWAHAK KONGHAK, October 1991, 29(5), 526-533(8), NONE
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Abstract
기존의 MOCVD법에서 사용한 원료의 문제점을 개선하기 위한 일환으로, 값이 싸고 취급이 용이한 초산아연 Zn(CH3COO)2ㆍ2H2O을 원료로 선택하여 열 CVD법에 의해서 C축 배향성이 우수한 ZnO박막을 상압과 비교적 낮은 반응온도에서 빠른 성막속도로 합성하였다. ZnO박막은 250℃이상으로부터 성막이 시작되었고, 온도가 올라갈수록 적층량이 증가하였다. 적층속도에 대하여 carrier gas(N2)의 유속, O2의 유속이 변수로 작용하였으며, 산소가 존재하지 않은 조건하에서도 성막이 가능하였다.
For the purpose of improving the use of raw materials, zinc acetate-2-water which is cheap and easy to handle was used to synthesize ZnO this films by thermal CVD method, which gave a good C-axis orientation even at atmospheric pressure and at relatively low temperature. The formation of ZnO films starts from 250℃ and the deposition rate increases with increasing reaction temperature. The rate of deposition was affected by flow rates of N2 and O2. Without the flow of O2, the oxygen required in synthesi-zing ZnO films was partially supplied by zinc acetate-2-water itself.
References
Scharowsky F, Z. Phys., 135, 318 (1953)
Bonasewicz P, Hirschwald W, Neumann G, J. Electrochem. Soc., 133(11), 2270 (1986)
Bateman TB, J. Appl. Phys., 33, 3309 (1962)
Solbrig C, Z. Phys., 184, 293 (1965)
Young CJ, Greig HG, RCA Rev., 15, 469 (1956)
Honda T, Kag. Kog., 52(9), 643 (1988)
Bennet BR, Lorenzo JP, Vaccaro K, Davis A, J. Electrochem. Soc., 134, 1517 (1987)
Maruyama T, Shionoya J, Jpn. J. Appl. Phys., 28(12), L2253 (1989)
Maruyama T, Tabata K, J. Appl. Phys., 68(8), 4282 (1990)
Suzuki M, Kag. Kog., 51(5), 389 (1987)
Tabata O, Kag. Kog., 52(9), 651 (1988)
Maruyama T, Nakai A, Jpn. J. Appl. Phys., 28(2), L346 (1989)
Pulker HK, "Coatings on Glass," Elsevier, New York, N.Y. (1984)
Raven MS, Al-Sinald MH, Owen SJT, Tansley TL, Thin Solid Films, 71, 25 (1980)
Bonasewicz P, Hirschwald W, Neumann G, J. Electrochem. Soc., 133(11), 2270 (1986)
Bateman TB, J. Appl. Phys., 33, 3309 (1962)
Solbrig C, Z. Phys., 184, 293 (1965)
Young CJ, Greig HG, RCA Rev., 15, 469 (1956)
Honda T, Kag. Kog., 52(9), 643 (1988)
Bennet BR, Lorenzo JP, Vaccaro K, Davis A, J. Electrochem. Soc., 134, 1517 (1987)
Maruyama T, Shionoya J, Jpn. J. Appl. Phys., 28(12), L2253 (1989)
Maruyama T, Tabata K, J. Appl. Phys., 68(8), 4282 (1990)
Suzuki M, Kag. Kog., 51(5), 389 (1987)
Tabata O, Kag. Kog., 52(9), 651 (1988)
Maruyama T, Nakai A, Jpn. J. Appl. Phys., 28(2), L346 (1989)
Pulker HK, "Coatings on Glass," Elsevier, New York, N.Y. (1984)
Raven MS, Al-Sinald MH, Owen SJT, Tansley TL, Thin Solid Films, 71, 25 (1980)
