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SnO2/Al2O3/Nb2O5 후막소자의 Acetonitrile 감지 특성
Acetonitrile Sensing Characteristics of SnO2/Al2O3/Nb2O5 Gas Sensors
HWAHAK KONGHAK, December 1993, 31(6), 715-722(8), NONE
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Abstract
SnO2의 모 물질에 Al2O3 및 Nb2O3(0.2-2.0wt%)를 첨가한 후막소자를 스크린 프린팅 방법으로 제조하였다. 제조된 소자의 acetonitrile 기체에 대한 감지특성을 산화물표면과 acetonitrile 사이의 산화반응에 의하여 생성된 화학종에 의하여 영향을 받았다. 적외선 스펙트라로부터 관찰한 결과 acetonitrile의 산화반응에 의한 생성물은 주로 CO2, NH3 및 H2O였으며 이들 화학종은 후막소자의 감지성질에 영향을 주었다. Nb2O5가 첨가된 SnO2 후막소자는 300℃의 동작온도에서 94%의 높은 감도를 나타내었으며 CO, SO2, CH4 및 C4H10 보다 acetonitrile에 대한 선택성이 높게 나타났다. 그리고 acetonitrile 85ppm 농도에 대하여 300℃의 동작온도에서 30일 동안 저항과 감도를 측정하여 본 결과 84%의 감도와 25±2kΩ의 인정한 저항값을 나타내었다.
The SnO2/Al2O3/Nb2O5 thick film sensor was fabricated by means of screen printing method. The sensing characteristics of acetonitrile was influenced by the chemical species produced by the oxidation reaction of acetonitrile on the surface of metal oxide. From the result of observed infrared spectra, the products formed by the oxidation reaction of acetonitrile were found to be mainly CO2, NH3 and H2O, whcih influenced the sensing properties. The SnO2 sensor added with Nb2O5 exhibited the sensitivity of 94% at the operation temperature of 300℃ and showed higher selectivity to acetonitrile than to CO, SO2, CH4 and C4H10. The thick film sensor which maintained for 30 days at the operation temperature 300℃ exhibited the resistance of 25±2kΩ and sensitivity of 84% in 85ppm of acetonitrile.
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