Articles & Issues
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
공정변수를 사용한 플라즈마 식각단면의 전사모사
Simulation of Plasma Etch Profile Based on Process Variables
HWAHAK KONGHAK, August 1994, 32(4), 606-613(8), NONE
Download PDF
Abstract
플라즈마 식각단면의 모사에서 내부변수와 공정변수 간의 관계식을 문헌의 실험자료와 물리, 화학적인 이론에 근거하여 도출하였다. 이 관계식에 의하여 통상적인 SF6 계에서의 식각속도를 구했는데 이것은 문헌에 보고된 식각속도와 크기자리수의 범위에서 일치하였다. 또 이 관계식에 의하여 공정변수인 압력과 전력을 변화시켜가며 계산한 식각속도의 변화는 실제의 경향과 일치하였다. Cl2/HBr/He계의 식각실험을 압력과 전력을 바꾸어 가며 수행하였다. 위에서 도출한 관계식의 계수와 지수를 C1, C2, C3의 세 가지 매개변수로 놓고 세 개의 실험결과에 fitting하였다. 이렇게 얻은 매개변수값을 사용하여 다시 다른 실험결과에 대하여 모사했을 때 실험결과와 잘 일치하는 식각단면을 얻을 수 있었다.
The correlations between the internal and the process variables in plasma etching were derived based on fundamental theories as well as experimental data from literatures. The rates of plasma etching in SF6 system were calculated based on these correlations, which agreed with the reported experimental values within the same orders of magnitude. The etch rates calculated for various process conditions changed in the same trend as the experimentally measured ones. Reactive ion etching(RIE) in Cl2/HBr/He system was performed under different pressures and electrical powers. Parameters in the correlation equations derived from literatures were replaced by three adjustable parameters, C1,C2 and C3, which were determined by fitting the simulation profiles to the three experimental results. Trench contours simulated using these parameters agreed well with those obtained from the experiments.
References
Antoniadis DA, Dutton RW, IEEE Trans. Electron Devices, 26, 490 (1979)
Oldham WG, Neureuther AR, Sung C, Reynolds JL, Nandgaonkar SN, IEEE Trans. Electron Devices, 27, 1455 (1980)
Pack R, Thurgate T, DEPICT and DEPICT-2, Users Manual (Technology Modling Assicates Palo Alto, CA) (1988)
Lorentz J, Pelka J, Ryssel H, Sachs A, Seidel A, Svoboda A, IEEE Trans. Comput. Aided Design, 4, 421 (1985)
Kushner MJ, J. Appl. Phys., 58, 4024 (1985)
Thompson BE, Sawin HH, Fisher DA, J. Appl. Phys., 63, 2241 (1988)
Han JH, Cho BO, Chung CH, Moon SH, HWAHAK KONGHAK, 32(3), 431 (1994)
Mutsukura N, Kobayashi K, Machi Y, J. Appl. Phys., 68, 2657 (1990)
Ulacia-Fresnedo JI, McVitte JP, J. Appl. Phys., 65, 1484 (1989)
Flamm DL, J. Appl. Phys., 52, 3633 (1981)
Ninomiya K, Suzuki K, Nishimatsu S, Okada O, J. Appl. Phys., 58, 1177 (1985)
Chapman B, "Glow Discharge Process," John Wiley & Sons (1980)
Morgan RA, "Plasma Etching in Semiconductor Fabrication," Elsevier (1985)
Mader H, "Plasma Processing," Electrochem. Soc., Pennington, p. 125 (1981)
Eisele KM, J. Electrochem. Soc., 128, 123 (1981)
Hosokawa N, Mutsusaki R, Asawaki T, Jpn. J. Appl. Phys., 435 (1974)
Bondur JA, J. Vac. Sci. Technol., 13, 1023 (1976)
Mauer JL, Logan JS, Zielskin LB, Schwarz GC, J. Vac. Sci. Technol., 15, 1734 (1978)
Oldham WG, Neureuther AR, Sung C, Reynolds JL, Nandgaonkar SN, IEEE Trans. Electron Devices, 27, 1455 (1980)
Pack R, Thurgate T, DEPICT and DEPICT-2, Users Manual (Technology Modling Assicates Palo Alto, CA) (1988)
Lorentz J, Pelka J, Ryssel H, Sachs A, Seidel A, Svoboda A, IEEE Trans. Comput. Aided Design, 4, 421 (1985)
Kushner MJ, J. Appl. Phys., 58, 4024 (1985)
Thompson BE, Sawin HH, Fisher DA, J. Appl. Phys., 63, 2241 (1988)
Han JH, Cho BO, Chung CH, Moon SH, HWAHAK KONGHAK, 32(3), 431 (1994)
Mutsukura N, Kobayashi K, Machi Y, J. Appl. Phys., 68, 2657 (1990)
Ulacia-Fresnedo JI, McVitte JP, J. Appl. Phys., 65, 1484 (1989)
Flamm DL, J. Appl. Phys., 52, 3633 (1981)
Ninomiya K, Suzuki K, Nishimatsu S, Okada O, J. Appl. Phys., 58, 1177 (1985)
Chapman B, "Glow Discharge Process," John Wiley & Sons (1980)
Morgan RA, "Plasma Etching in Semiconductor Fabrication," Elsevier (1985)
Mader H, "Plasma Processing," Electrochem. Soc., Pennington, p. 125 (1981)
Eisele KM, J. Electrochem. Soc., 128, 123 (1981)
Hosokawa N, Mutsusaki R, Asawaki T, Jpn. J. Appl. Phys., 435 (1974)
Bondur JA, J. Vac. Sci. Technol., 13, 1023 (1976)
Mauer JL, Logan JS, Zielskin LB, Schwarz GC, J. Vac. Sci. Technol., 15, 1734 (1978)
