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간략화된 MCVD 반응기에서의 초미립 SiO2 입자 증착특성
Deposition Characteristics of Ultrafine SiO2 Particles in Simplified MCVD Reactor
HWAHAK KONGHAK, April 1996, 34(2), 243-248(6), NONE
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Abstract
간략화된 MCVD 반응기에서 가열로 설정온도, 전체기체유량 및 초기 SiCl4 농도 등의 공정조건을 변화시키며 SiO2 입자의 증착특성에 대하여 이론적/실험적으로 연구하였다. 수치모사에서는 반응기 내의 전달현상식과 에어로졸 동력학식을 고려하였으며 수치모사에 의한 증착구간에서의 증착효율은 실험결과와 비교적 잘 일치하였다. 본 연구의 공정조건 범위에서는 가열로 설정온도가 높을수록, 초기 SiCl4 농도가 낮을수록 SiO2 입자의 증착효ㅇ은 높게 나타났으며, 전체기체유량이 증가할수록 SiCl4의 전환율과 증착효율은 감소하였다.
The deposition characteristics of SiO2 particles were investigated in simplified MCVD reactor theoretically and experimentally, changing the process conditions of furnace setting temperature, total gas flow rate and inlet SiCl4 concentration. The transport phenomena equations and aerosol dynamic equations inside reactor were considered in numerical simulation. The computed deposition efficiencies in deposition zone were in good agreement with the experimental results. For the process conditions in this study, it is found that the deposition efficiency of SiO2 particles increases as the furnace setting temperature increases, also as the inlet SiCl4 concentration decreases. As the total gas flow rate increases, the SiCl4 conversion and deposition efficiency decrease.
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References
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