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CVI를 이용한 이염화이메틸규소로부터의 탄화규소 증착에 의한 화이버강화 세라믹 복합재료 제조의 연구
Studies on the Preparation of Fiber Reinforced Ceramic Composites by the Deposition of SiC from Dichloro- dimethylsilane through Chemical Vapor Infiltration
HWAHAK KONGHAK, August 1996, 34(4), 443-450(8), NONE
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Abstract
이염화이메틸규소와 수소로부터 화학증기침투(CVI)에 의해 옷감형 탄소 화이버프리폼에 탄화규소를 증착시켜 탄소/탄화규소 복합재료가 제조되었다. 이염화이메틸규소는 950℃ 이상의 온도에서는 거의 전부 열분해되었다. 증착속도는 압력, 즉 이염화이메틸규소의 농도가 증가할수록 증가하였다. 또한 증착온도가 올라갈수록 증가하다가 1000℃이상의 고온에서는 부반응에 의해 감소하였다. 탄화규소는 샘플 내부 화이버 주위에 고르게 증착되었으며 β-형임이 확인되었다. 이염화이메틸규소의 1차 증착 반응속도상수는 950℃에서 30cm/min이었고, 아레니우스 상수와 활성화에너지는 각각 1.58 X 1012cm/min와 60kcal/mol이었다.
C/SiC composite materials were prepared by depositing silicon carbide from di- chlorodimethylsilane(DDS) and hydrogen in the woven fabrics of carbon fibers through chemical vapor inviltration(CVI)). Most of DDS decomposed thermally at the temperature above 950℃. The deposition rate increased with the pressure, i.e., the concentration of di- chlorodimethylsilane. It also increased with the deposition temperature, however, it decreased after the temperature reached 1000℃ due to side reactions. Silicon carbide deposited uniformly around fibers in the sample and was confirmed as β-type. The firstorder deposition rate constant at 950℃ was 30 cm/min and the Arrhenius constant and the activation energy were 1.58 X 1012 cm/min 60 kcal/mol, respectively.
References
이시우, CVD 핸드북, 반도출판사, 498-576 (1993)
Naslain R, Proceedings in the 1st Int. Symp. on Functionally Gradient Materials, 71 (1990)
Naslain R, Hannache H, Heraud L, Rossignol JY, Christin F, Bernard C, Proc. 4th European Conf. on Chemical Vapor Deposition, 293 (1983)
VandenBrekelFonville RMM, VanderStraten PJM, Verspui G, Proc. Electrochem. Soc., 81, 142 (1981)
Jensen KF, Proc. Electrochem. Soc., 84(6), 3 (1984)
Middleman S, Heble B, Cheng HCT, J. Mater. Res., 5(7), 1544 (1990)
Stinton DP, Caputo AJ, Lowden RA, Am. Ceram. Soc. Bull., 65(2), 347 (1986)
Sugiyma K, Yamamoto E, J. Mater. Sci., 24, 3756 (1989)
Gupta SM, Tsamopoulos JA, J. Electrochem. Soc., 137(5), 1626 (1990)
Jensen KF, Melkote RR, Extended Abstract Presented at the 1989 AIChE Meeting, San Franscisco, 54 (1989)
Sotrichos SV, Tomadakis M, Extended Abstracts Presented at the 1989 AIChE Annual Meeting, San Francisco, 135 (1989)
Chung GY, McCoy BJ, Smith JM, Cagliostro DE, Carswell M, Chem. Eng. Sci., 46(3), 723 (1991)
Chung GY, McCoy BJ, Smith JM, Cagliostro DE, Chem. Eng. Sci., 47(2), 311 (1991)
Chung GY, McCoy BJ, J. Am. Ceram. Soc., 74(4), 746 (1991)
Chung GY, Cagliostro DE, McCoy BJ, Smith JM, NASA T.M. (1991)
Rossignol JY, Langlais F, Naslain R, proc. Electrochem. Soc., 84(6), 596 (1984)
Tai NH, Chou TW, J. Am. Ceram. Soc., 72(3), 414 (1989)
Kobayashi F, Kawa KI, Iwamoto K, J. Cryst. Growth, 28, 395 (1976)
Dudukovic MP, Flat Plate Solar Array Workshop on the Science of Silicon Material Preparation, J.P.L. Publication, 83(13), 199 (1983)
Naslain R, Proceedings in the 1st Int. Symp. on Functionally Gradient Materials, 71 (1990)
Naslain R, Hannache H, Heraud L, Rossignol JY, Christin F, Bernard C, Proc. 4th European Conf. on Chemical Vapor Deposition, 293 (1983)
VandenBrekelFonville RMM, VanderStraten PJM, Verspui G, Proc. Electrochem. Soc., 81, 142 (1981)
Jensen KF, Proc. Electrochem. Soc., 84(6), 3 (1984)
Middleman S, Heble B, Cheng HCT, J. Mater. Res., 5(7), 1544 (1990)
Stinton DP, Caputo AJ, Lowden RA, Am. Ceram. Soc. Bull., 65(2), 347 (1986)
Sugiyma K, Yamamoto E, J. Mater. Sci., 24, 3756 (1989)
Gupta SM, Tsamopoulos JA, J. Electrochem. Soc., 137(5), 1626 (1990)
Jensen KF, Melkote RR, Extended Abstract Presented at the 1989 AIChE Meeting, San Franscisco, 54 (1989)
Sotrichos SV, Tomadakis M, Extended Abstracts Presented at the 1989 AIChE Annual Meeting, San Francisco, 135 (1989)
Chung GY, McCoy BJ, Smith JM, Cagliostro DE, Carswell M, Chem. Eng. Sci., 46(3), 723 (1991)
Chung GY, McCoy BJ, Smith JM, Cagliostro DE, Chem. Eng. Sci., 47(2), 311 (1991)
Chung GY, McCoy BJ, J. Am. Ceram. Soc., 74(4), 746 (1991)
Chung GY, Cagliostro DE, McCoy BJ, Smith JM, NASA T.M. (1991)
Rossignol JY, Langlais F, Naslain R, proc. Electrochem. Soc., 84(6), 596 (1984)
Tai NH, Chou TW, J. Am. Ceram. Soc., 72(3), 414 (1989)
Kobayashi F, Kawa KI, Iwamoto K, J. Cryst. Growth, 28, 395 (1976)
Dudukovic MP, Flat Plate Solar Array Workshop on the Science of Silicon Material Preparation, J.P.L. Publication, 83(13), 199 (1983)
