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ECR플리즈마를 이용한 실리콘 산화막의 제조
Preparation of Silicon Dioxide Film by ECR Plasma
HWAHAK KONGHAK, December 1997, 35(6), 900-907(8), NONE
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Abstract
ECR산소 플라즈마를 사용하여 확산법과 화학증착법으로 실리콘 산화막을 성장시켰다. ECR에 의해 생성된 산소플라즈마내에 함유된 반응성 산소이온들은 마이크로파 출력, 산소기체의 유량, 기판자체에 걸리는 DC bias, 기판위치 등에 의해 영향을 받는다. 따라서 플라즈마내에 양으로 하전된 산소이온들은 성장된 실리콘 산화막내에 전하밀도의 증가와 밀접한 관계가 있다. 일반적으로 VFB의 이동은 산화막내에 유동전하와 계면 전하밀도 때문이다. 본 연구에서 C-V곡선의 이동은 플라즈마내에 존재하는 양으로 하전된 산소이온이 산화막내에 도입되어 전하밀도가 증가하기 때문이며 VFB와 전하밀도는 1차 반비례관계가 있음을 확인하였다.
The SiO2 films were prepared by electron cyclotron resonance(ECR) plasma diffusion and chemical vapor deposition(CVD) method. In an oxygen plasma generated by ECR source, these reactive ions can be controlled by adjusting the microwave power, O2 flow rate, self-DC bias, and source to sample distance, etc. The positive oxide ions in plasma is therefore related to increase positive oxide charge density in SiO2 films. The flatband voltage in general is shifted due to mobile ionic charge and interface oxide charge. In this study, C-V curve shift is related to the positive oxide charge contained in the SiO2 films and interface states and the flatband voltage is inversely proportional to Qit+Qf.
Keywords
References
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Suzuki K, Ninomiya K, Nishimatsuo S, Okudarira S, J. Vac. Sci. Technol. B, 3, 1025 (1985)
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Carl DA, Hess DW, Lieberman MA, J. Vac. Sci. Technol. A, 8(3), 2924 (1990)
Shufflebotham PK, Thomson DJ, Card HC, J. Appl. Phys., 64, 4398 (1988)
Chau TT, Kao KC, J. Vac. Sci. Technol. B, 14(1), 527 (1996)
Tiller WA, J. Electrochem. Soc., 127, 625 (1984)
Nicollian EH, Brews JR, "MOS(Metal Oxides Semiconductor) Physics and Technology," (1982)
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Ting W, Hwang H, Lee J, Kwong DL, Appl. Phys. Lett., 57, 2808 (1990)
Lee C, Graves DB, Lieberman MA, Hess DW, J. Electrochem. Soc., 141(6), 1546 (1994)
