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투명전도성 ZnO 박막의 제조 및 전기착색창 투명전극으로의 활용에 관한 연구
Preparation of Transparent Conducting ZnO Thin Film and Its Application for Electrochromic Windows as Transparent Conducting Electrodes
HWAHAK KONGHAK, April 1998, 36(2), 132-138(7), NONE
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Abstract
고가의 투명전도성 박막재료인 ITO의 대체물질로서 sol-gel법에 의한 투명전도성 ZnO 박막을 제조하였다. Al이 0.5at% 도핑된 ZnO 박막(ZnO : Al)은 약 400℃의 온도로, 수소 분위기에서 열처리할 경우 8×10-3Ω㎝의 가장 좋은 전도성을 나타내었고, p형 불순물인 Na이 도핑된 경우에는 보상효과로 인해 매우 높은 비저항을 나타내었다. 제조된 ZnO 박막의 투명전극으로서의 활용성을 조사하기 위해, 역시 sol-gel법으로 제조한 비정질의 WO3를 이용하여 전기착색창(eletrochromic window)에 대한 실험을 수행하였다. LiClO4/PEO를 고체 전해질로 사용하여 제조된 고체형 전기착색창은 약 수 초 이내에 착색 및 탈색이 이루어 졌으며, ZnO : Al 박막이 전기착색창과 같은 용도의 투명전극으로 활용될 수 있음을 보였다.
Transparent conducting ZnO films were prepared by the sol-gel method. The 0.5 at% Al-doped ZnO thin film(ZnO:Al) showed the lowest specific resistivity of about 8×10-3Ω㎝, after annealed at 400℃ under a hydrogen environment. In order to show an applicability of the film as transparent conducting electrodes, the electrochromic window was fabricated by using the amorphous electrochromic WO3 films prepared by the sol-gel process. The solid-state electrochromic window showed the reversible changes between coloration and bleaching within a few seconds at an applied voltage of below 5 V. It has been shown from the present study that the ZnO:Al film could be used as an transparent conducting electrode for applications such as the electrochromic windows.
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Ngasu M, Koshida N, J. Appl. Phys., 71, 398 (1992)
Kobayashi H, Mori H, Ishida T, Nakato Y, J. Appl. Phys., 77, 1301 (1995)
Kobayashi H, Kogetsu Y, Tomofuji T, Takata S, J. Cryst. Growth, 117, 370 (1992)
Eberspacher C, Fahrenbruch AL, Bube RH, Thin Solid Films, 136, 1 (1986)
Nanto H, Minami T, Shooji S, Takata S, J. Appl. Phys., 55, 1029 (1984)
Petrou P, Singh R, Brodie DE, Appl. Phys. Lett., 35, 930 (1982)
Sato H, Minami T, Miyata T, Takata S, Ishii M, Thin Solid Films, 246(1-2), 65 (1994)
Lau WS, Fonash SJ, J. Electron. Mater., 16, 141 (1978)
Varkey AJ, Fort AF, Thin Solid Films, 239(2), 211 (1994)
Park HC, Moon H, Jung SC, HWAHAK KONGHAK, 29(5), 526 (1991)
Tang W, Cameron DC, Thin Solid Films, 238(1), 83 (1994)
Choi YS, Lee CG, Cho SM, Thin Solid Films, 289(1-2), 153 (1996)
Unuma H, Tonooka K, Sozuki Y, Furusaki T, Kodaira K, Matsushita T, J. Mater. Sci. Lett., 5, 1248 (1986)
Choi Y, Cho WI, Cho BW, Yun KS, HWAHAK KONGHAK, 28(1), 67 (1990)
Choi Y, Cho WI, Cho BW, Yun KS, HWAHAK KONGHAK, 30(1), 55 (1992)
Powder Diffraction File, Dara Card 5-644, 3c PDS International Centre for Diffraction Data, Swartmore, PA
Pankove JI, "Optical Processes in Semiconductors," Dover Publications, New York (1970)
Roth AP, Webb JB, Williams DF, Solid State Commun., 39, 1269 (1981)
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Morita H, Oyo Butsuri, 51, 488 (1982)
Hashimoto S, Matsuoka H, J. Electrochem. Soc., 138(8), 2403 (1991)
