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[2.2]Paracyclophane으로부터 패릴린-N 박막의 저온 증착
Low Temperature Vapor Deposition of Parylene-N Films from [2.2]Paracyclophane
HWAHAK KONGHAK, December 1998, 36(6), 896-902(7), NONE
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Abstract
초고집적회로에서 층간 절연체로 사용을 위하여 [2.2]paracyclophane으로부터 패릴린-N(parylene-N : PA-N) 박막을 20℃ 이하의 저온에서 증착하였다. 박막 두께는 AFM과 α-step profilometry에 의해, 박막 특성은 FTIR, DSC, TGA, SEM 및 C-V등에 의해 측정하였다. 증착된 PA-N박막의 두께는 5,000-12,000 Å이었으며, 증착 속도는 30-70 Å/min이었다. PA-N 박막의 유전율은 2.7±0.05로 나타났다. 운반 기체 유량, 전구체 분해 온도, 증착 온도가 증가함에 따라 증착 속도가 감소한 반면, 증착 압력이 증가하는 경우에는 증착 속도가 증가하였다. 전구체 분해 온도가 750℃이거나 증착 압력이 1 torr보다 높은 경우에는 기상에서의 입자 형성으로 인해 박막 표면이 조악하였다. PA-N 박막 성장은 p-xylylene 단량체의 응축이 율속 단계인 것으로 나타났다.
Parylene-N(PA-N) films for use as interlayer dielectrics in ULSI were deposited from [2.2]paracyclophane at low temperatures below 20℃. The film thickness was measured using AFM and α-step profilometry and the film properties were evaluated using FTIR, DSC, TGA, SEM, and C-V techniques. The film thickness measured was 5,000-12,000Å and the growth rate was 30-70 Å/min. The dielectric constant of the deposited PA-N films was found to be 2.7± 0.05. The deposition rate decreased with increasing carrier gas flow rate, precursor decomposition temperature or wafer temperature, but it increased with increasing pressure. At a precursor decomposition temperature of 750℃ or at a deposition pressure above 1 tour the film surface became rough due to particle formation in the gas phase. It was shown that the condensation of a pxylylene monomer was a rate-limiting step in the growth of the PA-N films.
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