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저압 화학증착에 의해 제조된 ZnO 박막의 구조 및 음극발광특성
Structure and Cathodoluminescence Characteristics of ZnO Films Prepared by Low-Pressure Chemical Vapor Deposition
광운대학교 공과대학 화학공학과, 서울 139-701 1중앙대학교 공과대학 화학공학과, 서울 156-756
Department of Chemical Engineering, Kwangwoon University, Seoul 139-701, Korea 1Department of Chemical Engineering, Chungang University, Seoul 156-756, Korea
HWAHAK KONGHAK, April 2000, 38(2), 219-224(6), NONE
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Abstract
본 연구에서는 유기금속화학증착법을 이용하여 전계방출디스플레이에서 양극판의 형광막으로 사용될 수 있는 산화아연(ZnO)박막을 제조하였다. Diethyl zinc로부터 증착된 박막의 두께는 AFM과 SEM에 의해, 박막의 특성은 XRD, XPS, PL 및 CL 등에 의해 측정되었다. 한편 증착된 ZnO 박막의 두께는 3,000-10,000Å이었으며 증착속도는 50-150Å/min으로 측정되었다. 증착면의 균일도는 450℃에서 제일 우수하였으며, 증착속도는 500℃에서 제일 빠른 것으로 나타났다. 증착온도가 550℃이상일 경우에는 기상에서의 입자형성 및 탈착속도의 증가로 인해 박막 표면이 열악하였으며, 350℃이하일 경우에는 낮은 반응온도로 인해 반응이 거의 일어나지 않았다. 비록 측정된 음극선발광(CL)값이 낮게 나타났지만, 본 실험의 결과에 의하면 저압유기금속 화학증착공정에서 증착온도가 박막특성에 가장 큰 영향을 미치는 요인인 것으로 보여진다.
ZnO thin film phosphor was deposited by MOCVD method for the applicatons of anode plate in a Field Emission Display. Atom-Forced Microscope, Scanning Electron Microscope, XRD, XPS, PL and CL were used for the examinations of the characteristics of the film deposited from diethyl zinc vapor. The film thickness ranges from 3,000Å to 10,000Å, and the rate of deposition was 50-150Å/min. The surface of the thin film was the most uniform at 450℃ and the rate of deposition was fastest at 500℃ among various temperature conditions. Above the deposition temperature of 550℃, the crystalline size was inhomogeneous because of the increased desorption rate, and the film was not deposited under 350℃. Even though the measured value of Cathodoluminescence(CL) wa relatively low, the deposition temperature was found to be the most influential factor in the low pressure metal organic chemical vapor deposition process.
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