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다결정 실리콘 식각 후처리에 대한 세정 효과 해석
The Cleaning Effect Analysis on Post Treatment of Polysilicon Etching
LG 반도체(주) 개발본부 Project Group 2 1충북대학교 화학공학과 2서울대학교 화학공학과
Project Group 2, Development HQ, LG Semicon. Co., Ltd., Korea 1Department of Chemical Engineering, Chungbuk National University, Korea 2Department of Chemical Engineering, Seoul National University, Korea
jdlee@cbucc.chungbuk.ac.kr
HWAHAK KONGHAK, April 2000, 38(2), 230-235(6), NONE
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Abstract
본 논문에서는 다결정 실리콘을 Cl2/HBr/H2-O2 혼합기체로 식각할 때 발생하는 전류물에 대한 분석과 이를 제거하기 위한 세정 방법에 대한 효과에 대하여 연구하였다. 본 연구에서는 p-type 실리콘 기판/열산화막 1,000Å/다결정실리콘 5,500Å구조를 갖는 시료를 포토레지스트로 패턴을 형상하였으며, 시료는 MERE 플라즈마 식각장치를 이용하여 식각되었다. 이때 발생된 잔류물의 관찰 및 성분분석을 위하여 SEM과 ESCA를 이용하였다. 잔류물을 제거하기 위하여 습식세정(SC1+SC2,BOE)과 건식세정(CHF3/O2, CF4/O2)의 방법을 적용하였으며, 그 효과에 대한 분석도 또한 SEM과 ESCA를 이용하였다. 이 연구에서 잔류물은 SiOx의 결합을 갖는 것으로 나타났다. 적용된 습식세정과 건식세정 방법은 식각 잔류물을 제거하는데 효과적인 것으로 나타났으나, 건식세정방법은 또 다른 (CF)x 계열의 잔류물을 표면에 남기는 것으로 나타났다.
This paper studied the analysis of etch residue and the effects of cleaning method to remove it when polysilicon was etched by Cl2/HBr/He-O2 mixture. Samples was prepared by forming photoresist pattern in wafer with p-type Si-substrate/thermal oxide 1,000Å/polysilicon 5,500Å structure and etched by MERIE plasma etcher. The observation and composition analysis of etch residue is characterized by SEM and ESCA. Wet(SC1 + SC2, BOE) and dry cleaning (CHF3/O2, CF4/O2) was used to remove etch residue and then the effects were analyzed by SEM and ESCA. Etch residue was considered in having SiOx bond. The used wet and dry cleanings had an effect on effect on removing the etch residue but, dry cleaning left a new residue such as (CF)x on etched surface.
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