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Ag+/aluminosilica 흡착제에 대한 에탄과 에틸렌의 흡착특성 연구
Study on the Adsorption Characteristics of Ethane and Ethylene on Aluminosilica Based Sorbent
한국에너지기술연구원 분리공정연구센터, 305-343 대전시 유성구 장동 72-1 1경북대학교 화학공학과, 702-701 대구시 북구 산격동 1370
Separation Process Research Center, Korea Institute of Energy Research, 71-2, Jang-dong, Yusung-gu, Daejeon 305-343, Korea 1Department of Chemical Engineering, Kyungpook National University, 1370, Sangyeok-dong, Buk-gu, Daegu 702-701, Korea
soonhcho@kier.re.kr
HWAHAK KONGHAK, December 2003, 41(6), 749-755(7), NONE
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Abstract
고농도의 에틸렌을 생산하기 위해서 π-complexation을 유도할 수 있는 질산은을 알루미노실리카에 함침시킨 흡착제를 제조하였다. 순수 성분 흡착량 측정을 위해 Cahn balance를 사용하였고, 이성분 흡착량을 측정하기 위해 부피법을 이용하였다. 순수 성분은 온도 298.15 K, 323.15 K, 353.15 K 그리고 압력 0-5,100 mmHg 범위에서 측정하였으며, 이성분은 온도 298.15 K, 323.15 K 그리고 평형 압력 900 mmHg에서 측정하였다. 에탄의 순수성분 흡착량은 Langmuir식으로도 잘 나타낼 수 있었고, 에틸렌의 순수성분 흡착량은 Toth식과 물리흡착면과 화학흡착면을 고려한 Langnuir+Unilan, Langnuir-Freundlich모델이 잘 나타내었다. 표면 덮임 정도가 증가함에 따라 에탄 및 에틸렌의 흡착열이 감소함을 알 수 있었다. 흡착열, 이성분계 흡착등온선을 계산하기 위하여 Langmuir-Freundlich, Toth식 및 IAS 모델을 사용하였다.
To produce high concentration of ethylene, new adsorbents were synthesized by incipient wetness method of AgNO3 on aluminosilica. Cahn balance was used to measure pure isotherms of C2H6 and C2H4, and volumetric apparatus was used to measure C2H4-C2H6 binary isotherms. Adsorption isotherms of pure gases were measured at 298.15 K, 323.15 K and 353.15 K, pressure ranges are from 0 mmHg to 5,100 mmHg. Pure ethane isotherm showed good agreement with Langmuir isotherm and pure ethylene isotherm showed good agreement with Langmuir-Freundlich and Langmuir+Unilan isotherms which were derived from considering physical site and chemical site. The decrease in heat of adsorption of ethylene with increasing the coverage was observed and the same result in case of ethane. Langmuir-Freundlich isotherm, Toth isotherm and ideal adsorbed solution(IAS) model were used to calculate isosteric heats of adsorption, and also used to predict binary isotherms.
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Danner RP, Choi CF, Ind. Eng. Chem. Fundam., 17, 248 (1978)
Wu ZB, Han SS, Cho SH, Kim JN, Chue KT, Yang RT, Ind. Eng. Chem. Res., 36(7), 2749 (1997)
Cho SH, Han SS, Kim JN, Kumar P, Choudary NV, Bhat SGT, U.S. Patent, 6,315,846 (2001)
Park JH, Lee HK, Han SS, Kim JN, Cho SH, HWAHAK KONGHAK, 40(4), 467 (2002)
Ho WS, Doyle G, Savage DW, Pruett RL, Ind. Eng. Chem. Res., 27, 334 (1988)
Rege SU, Yang RT, Chem. Eng. Sci., 57(7), 1139 (2002)
Yang RT, Kikkinides ES, AIChE J., 41(3), 509 (1995)
O'Brien JA, Myers AL, Ind. Eng. Chem. Process Des. Dev., 24, 1188 (1985)
Choudary NV, Kumar P, Bhat TSG, Cho SH, Han SS, Kim JN, Ind. Eng. Chem. Res., 41(11), 2728 (2002)
Rege SU, Padin J, Yang RT, AIChE J., 44(4), 799 (1998)
