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Language: korean

Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received September 22, 2003
Accepted January 5, 2004

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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이온 빔 스퍼터링법에 의한 Bi2212 박막의 동시 증착 특성

Characteristics of Co-Deposition in Bi2212 Thin Films Fabricated by using the Ion Beam Sputtering Method

천민우 임중관 박용필^†

Min-Woo Cheon Jung-Kwan Lim Yong-Pil Park^†

동신대학교 전기전자공학과, 520-714 전남 나주시 대호동 252

Department of Electrical & Electronic Engineering, Dongshin University, 252, Daeho-dong, Naju, Jeonnam 520-714, Korea

Korean Chemical Engineering Research, June 2004, 42(3), 368-370(3), NONE Epub 12 July 2004

Abstract

Bi2212 초전도 박막을 이온 빔 스퍼터링 법으로 제작하였다. 그 결과, 생성막의 조성을 Bi2212로 설정했음에도 불구하고 Bi2201, Bi2212 및 Bi2223상이 모두 생성되었다. 이들 박막들의 안정상 생성 영역은 기판 온도-산화 가스압의 Arrhenius 플롯에서 우측 하단 방향으로 경사진 직선으로 표시되며 매우 좁은 영역에 분포되어 있다. 또한, SEM으로 박막 표면을 관찰한 결과, 생성된 상과 박막 조성이 일치 한 경우에도 표면에 다수의 석출물이 존재함을 알 수 있었다.

The Bi2212 superconducting thin films were fabricated by using the ion beam sputtering method. As a result, although the composition of Bi2212 was set point, the phase of Bi2201, Bi2212 and Bi2223 was formed. The product region of these stable phases is indicated as inclined line in the direction of the right lower end from the Arrhenius plot of the substrate temperature-oxidation gas pressure, and are distributed in very small area. According to the result observing the surface of the thin film with SEM, even in case that the formed phase and the composition of the thin film agree, also it can be known that there are a number of the precipitates on the surface.

Keywords

Ion Beam Sputtering Method Deposition Thin Film Bi2201 Bi2212 Bi2223

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