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Received November 5, 2004
Accepted December 16, 2004
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공용매로 변형된 초임계 이산화탄소를 이용한 이온 주입 포토레지스트 세정
Stripping of Ion-Implanted Photoresist Using Cosolvent-Modified Supercritical Carbon Dioxide
수원대학교 공과대학 화공생명공학과, 445-743 경기도 화성시 봉담읍 와우리 산 2-2 1연세대학교 공과대학 화확공학과, 120-749 서울시 서대문구 신촌동 134
Department of Chemical and Biochemical Engineering, The University of Suwon, San 2-2, Wau-ri, Bongdam-up, Hwaseong, Gyeonggi 445-743, Korea 1Department of Chemical Engineering, Yonsei University, 134, Sinchon-dong, Seodaemun-gu, Seoul 120-749, Korea
gblim@suwon.ac.kr
Korean Chemical Engineering Research, February 2005, 43(1), 27-32(6), NONE Epub 3 March 2005
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Abstract
본 연구에서는 다양한 공용매로 변형된 초임계 이산화탄소를 이용하여 웨이퍼 표면에 존재하는 이온주입 포토레지스트(IIP, ion-implanted photoresist) 및 잔류 불순물의 제거 공정을 97, 148, 200 ℃의 온도와 200, 300, 400 bar의 압력 조건에서 수행하였다. 이온주입 포토레지스트는 순수 초임계 이산화탄소에 의해 제거되지 않았으나 팽윤(swelling)되는 것을 확인할 수 있었다. 또한, 단일 공용매 및 비양성자성 용매들의 혼합 공용매로 변형된 초임계 이산화탄소 시스템은 이온주입 포토레지스트를 팽윤시키나, 제거에 효과적이지 못하였다. 그러나 DMSO에 DIW가 혼합된 혼합 공용매(5%, v/v)로 변형된 초임계 이산화탄소 시스템은 97℃, 200 bar의 온도, 압력 조건에서 30분 동안 세정 실험을 수행한 결과 이온 주입 포토레지스트의 제거에 효과적이었다(약 80%). 본 연구에서 사용된 혼합 공용매로 변형된 초임계 이산화탄소 시스템은 플라즈마 애싱(ashing) 및 산과 용매가 기본이 되는 습식 세정 방법의 대안으로서 화학액의 사용과 폐수를 감소시킬 수 있다.
We propose an effective and environmentally friendly dry stripping method using a supercritical carbon dioxide (SCCO2) system modified by a single and multiple cosolvents to remove ion-implanted photoresist and residue from a wafer surface at three different temperatures (97, 148, 200 ℃) and pressures (200, 300, 400 bar). After high dose of ion implantation the photoresist was not easily removed by using pure SCCO2, but swollen. The SCCO2 system modified by single cosolvents and multiple cosolvents mixed with aprotic solvents could not effectively remove the heavy organics, but swell them. However, the SCCO2 system modified with multiple cosolvent (5%, v/v) composed of DMSO and DIW showed high removal efficiency for ion-implanted photoresists at 97 ℃ and 200 bar for 30 min (about 80%). In this study it has been shown that the dry stripping method using SCCO2 system modified with multiple cosolvents could replace either plasma ashing or acid and solvent wet bench method and dramatically reduce accompanied chemical usage and disposal.
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Flamm DL, Solid State Technol., 35, 37 (1992)
Louis D, Lajoinie E, Pires F, Lee WM, Holmes D, Charcterization and Process Optimization, 41, 415 (1998)
Lee WM, "Aproven Sub-micron Photoresist Stripper Solution for Post Metal and via Hole Processes", EKC Technology, Inc. (1996)
Nagal N, Imai T, Terada K, Seki H, Okumura H, Fujino H, Yamamoto T, Nishuyama I, Hatta A, Surf. Interface Anal., 34, 545 (2002)
Gillespie P, Berry I, Sakthivel P, "Semiconductor Operations, Fusion Systems Division, Rockville, MD., Wafer Temperature Control-a Critical Parameter for Dry Photoresist and Residue Removal", Semiconductor International (1999)
Weibel GL, Ober CK, Microelectron. Eng., 65, 145 (2003)
Mullee WH, "Removal of Photoresist and Residue from Sub strte using Supercritical Carbon Dioxide Process", Kor. Patent No. 2003-0024873 (2003)
Cotte JM, McCullough KJ, Moreau WM, Pope KR, Simons JP, Taft CJ, "Process of Removing Ion-implanted Photoresist from a Workpiece", U.S. Patent No. 6,683,008 B1 (2004)
