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Received December 27, 2004
Accepted February 18, 2005
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CVD법에 의해 성막된 구리의 표면 형상 및 충진 특성에 관한 연구
Surface Morphology and Hole Filling Characteristics of CVD Copper
전남대학교 공과대학 응용화하공학부 촉매연구소, 500-757 광주시 북구 용봉동 300 1전남대학교 신소재공학부, 500-757 광주시 북구 용봉동 300
Department of Chemical Engineering and The research Institute of Catalysis, Chonnam National University, 300, Yongbong-dong, Buk-gu, Gwangju 500-757, Korea 1Department of Materials Science & Engineering, Chonnam National University, 300, Yongbong-dong, Buk-gu, Gwangju 500-757, Korea
kdhh@chonnam.ac.kr
Korean Chemical Engineering Research, February 2005, 43(1), 98-102(5), NONE Epub 4 March 2005
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Abstract
본 연구에서는 유기금속 전구체인(HFAC)Cu(DMB)을 이용하여 구리를 제조하고, 기판온도 및 요오드 화합물이 증착 구리막의 표면 형상 및 충진 특성에 미치는 영향을 살펴보았다. 증착 온도가 높을수록 표면 형상이 거칠어지고 충진 특성이 악화되었으며, 요오드를 사용하여 증착할 경우 거칠기와 충진 특성이 개선됨을 알 수 있었다. 이때 요오드 화합물과 전구체를 동시에 반응기에 유입할 경우보다 구리의 씨앗층을 증착하고 요오드 화합물을 반응기에 유입한 후 다시 구리 증착을 진행하는 경우가 좀 더 효과가 컸다.
This article describes a study of chemical vapor deposition (CVD) of copper thin films on TiN substrates using (HFAC)Cu(DMB) as a precursor. The surface morphology and conformality of the Cu films as functions of substrate temperature and the presence or absence of iodine have been investigated. The surface roughness was increased significantly along with decrement of the step coverage by increasing the deposition temperature. The highest conformal films with the lowest surface roughness were obtained using the process of copper CVD, where iodine vapor were discretely introduced into the reactor during the growth of copper.
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References
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Choi KK, Pyo SG, Lee DW, Rhee SW, Jpn. J. Appl. Phys., 41, 2962 (2002)
Choi KK, Rhee SW, J. Electrochem. Soc., 148(7), C473 (2001)
Senkevich JJ, Yang GR, Lu TM, Cale TS, Jezeweski C, Lanford WA, Chem. Vapor Depos., 8, 189 (2002)
Lin JL, Bent BE, J. Phys. Chem., 96, 8529 (1992)
