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Received October 18, 2006
Accepted December 7, 2006
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불산-오존-희석 암모니아수 세정에 의한 실리콘 웨이퍼 표면의 미세입자 제거
Particle Removal on Silicon Wafer Surface by Ozone-HF-NH4OH Sequence
(주)실트론 기술연구소, 730-724 경북 구미시 임수동 283
R & D Center, Siltron, 283, Imsoo-dong, Gumi, Gyeong-Buk 730-724, Korea
thisisho@siltron.co.kr
Korean Chemical Engineering Research, April 2007, 45(2), 203-207(5), NONE Epub 7 May 2007
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Abstract
불산과 오존 세정 시 실리콘 웨이퍼 표면의 미세입자를 효과적으로 제거할 수 있는 세정 방법에 대하여 연구하였다. 불산의 농도가 0.3 vol% 이상이 되어야 미세입자가 제거 되었으며, 초음파가 인가된 오존수를 사용 시 제거 효율은 증가되었다. 오존과 불산 세정 단계 이후에 추가로 극미량의(0.01 vol%) 희석 암모니아수 세정을 하면 미세입자가 99%이상 제거됨을 확인하였다. 이는 암모니아수에 의한 웨이퍼 표면의 미세 에칭 효과와 알칼리 영역에서의 재흡착 방지 효과가 동시에 작용함에 기인된다고 보인다. 한편, 불산-오존-희석 암모니아수 세정은 통상의 SC-1 세정과 비교할 때 표면 미세 거칠기가 개선되는 경향을 보였다. 불산-오존-희석 암모니아수 세정은 상온에서도 미세입자를 효과적으로 제거할 수 있는 세정 방법으로, 고온 공정 및 과다한 화학액을 사용하는 기존 습식세정의 대안으로서 기대된다.
In this paper efficient method for particle removal from silicon wafers by usage of HF and ozone was studied. It was found that at least 0.3 vol% concentration of HF was required for particle removal and removal efficiency increased with the application of megasonic in ozonated water. Additional cleaning with minute amount of ammonia (0.01 vol%) after HF/Ozone step showed over 99% in removal efficiency. It is proposed that the superior cleaning efficiency of HF-Ozone-ammonia is due to micro-etching of silicon surface and impediment of particle re-adsorption in alkali environment. Compared to SC-1 cleaning method micro roughness has also been slightly improved. Therefore it is expected that HF-ozone-ammonia cleaning method is a viable alternative to the conventional wet cleaning methods.
Keywords
References
Kern W, Noyes Publication, New Jersey (1993)
Ojima S, Kubo K, Kato M, Toda M, Ohmi T, J. Electrochem. Soc., 144(4), 1482 (1997)
De Smedt F, De Gendt S, Heyns MM, Vinckier C, J. Electrochem. Soc., 148(9), G487 (2001)
Morita M, Ida J, Ii T, Ohmi T, Proceeding of the IEEE International Symposium on Semiconductor Manufacturing Conference, 453 (1999)
Vankerckhoven H, De Smedt F, Van Herp B, Claes M, De Gendt S, Heyns MM, Vickier C, Solid State Phenomena, 76-77, 207-210 (2001)
Lim SW, Christopher ED, Solid State Phenomena, 76-77, 215-218 (2001)
Claes M, De Gendt S, Kenens C, Conard T, Bender H, Storm W, Bauer T, Lagrange S, Mertens P, Heyns MM, Solid State Phenomena, 76-77, 223-226 (2001)
Choi BK, Jeon HT, J. Korean Phy. Soc., 33(5), 579 (1998)
Vos R, Xu, K, Lux M, Fyen W, Singh R, Chin Z, Mertens P, Hatcher Z, Heyns M, Solid State Phenomena, 76-77, 263-266 (2001)
Choi GM, Yokoi I, Ohmi T, Solid State Phenomena, 76-77, 267-270 (2001)
Bergman EJ, Lagrange S, Claes M, De Gendt S, Rohr E, Solid State Phenomena, 76-77, 85-88 (2001)
Knotter DM, Dumesnil Y, Solid State Phenomena, 76-77, 255-258 (2001)
Ojima S, Kubo K, Kato M, Toda M, Ohmi T, J. Electrochem. Soc., 144(4), 1482 (1997)
De Smedt F, De Gendt S, Heyns MM, Vinckier C, J. Electrochem. Soc., 148(9), G487 (2001)
Morita M, Ida J, Ii T, Ohmi T, Proceeding of the IEEE International Symposium on Semiconductor Manufacturing Conference, 453 (1999)
Vankerckhoven H, De Smedt F, Van Herp B, Claes M, De Gendt S, Heyns MM, Vickier C, Solid State Phenomena, 76-77, 207-210 (2001)
Lim SW, Christopher ED, Solid State Phenomena, 76-77, 215-218 (2001)
Claes M, De Gendt S, Kenens C, Conard T, Bender H, Storm W, Bauer T, Lagrange S, Mertens P, Heyns MM, Solid State Phenomena, 76-77, 223-226 (2001)
Choi BK, Jeon HT, J. Korean Phy. Soc., 33(5), 579 (1998)
Vos R, Xu, K, Lux M, Fyen W, Singh R, Chin Z, Mertens P, Hatcher Z, Heyns M, Solid State Phenomena, 76-77, 263-266 (2001)
Choi GM, Yokoi I, Ohmi T, Solid State Phenomena, 76-77, 267-270 (2001)
Bergman EJ, Lagrange S, Claes M, De Gendt S, Rohr E, Solid State Phenomena, 76-77, 85-88 (2001)
Knotter DM, Dumesnil Y, Solid State Phenomena, 76-77, 255-258 (2001)
