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Received December 7, 2007
Accepted December 27, 2007
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RF Plasma CVD법에 의해 증착된 카본나노튜브(CNT)의 특성에 대한 기판 온도의 영향
The Effects of Substrate Temperature on Properties of Carbon Nanotube Films Deposited by RF Plasma CVD
공주대학교 화학공학부, 314-701 충남 공주시 신관동 182
Department of chemical engineering, College of Eng., Kongju National University, 182 Shinkwan-dong, Kongju, Chungnam 314-701, Korea
dskim@kongju.ac.kr
Korean Chemical Engineering Research, February 2008, 46(1), 50-55(6), NONE Epub 28 February 2008
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Abstract
RF plasma CVD법을 이용하여 금속 촉매(Fe)가 증착된 SiO2 기판 위에 H2와 C2H2의 혼합가스를 사용하여 증착된 탄소나노튜브(carbon nanotube, CNT)의 특성에 대한 기판의 온도의 영향을 조사하였다. SiO2 위에 철 촉매는 RF 마그네트론 스퍼터에 의해 만들어졌다. 고 순도의 나노튜브 박막을 얻기 위해서 기판 홀더 위에 접지된 그리드 메쉬 커버를 설치하였다. 증착된 CNT의 표면 미세구조 및 화학적 구조를 SEM, Raman, XPS, 그리고 TEM으로 측정하였다. 증착된 CNT 박막들은 대나무 같은 다중벽 구조를 가지는 탄소 파이버 형태였으며 550 ℃에서 보다 600 ℃에서 보다 더 치밀한 구조를 보이나 650 ℃에서는 밀도가 다소 감소함을 알 수 있었다.
Carbon Nanotube (CNT) films were deposited with varying deposition temperature by RF plasma CVD on Fe catalysts deposited onto SiO2 films grown thermally on the silicon wafer using C2H2 and H2 gases. The Fe catalysts on silicon oxide film were made by RF magnetron sputtering. The grounded grid mesh cover on the substrate holder was used for depositing CNT thin films with high purity. The surface morphologies and chemical structure of deposited CNT films were characterized using SEM, Raman, XPS and TEM. It was observed that deposited CNTs films were carbon fiber type having Bamboo-like multiwall structure and CNT film grown at 600 °C was more dense than that at 550 ℃, but become less dense at 650 ℃.
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