Articles & Issues

Language: korean

Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received April 10, 2008
Accepted April 22, 2008

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

All issues

rf 마그네트론 스퍼링에 의하여 증착된 TiN 박막의 물성에 대한 증착변수의 영향

Effect of Deposition Parameters on the Properties of TiN Thin Films Deposited by rf Magnetron Sputtering

이도영 정지원^†

Do Young Lee Chee Won Chung^†

인하대학교 화학공학과, 402-751 인천시 남구 용현동 253

Department of Chemical Engineering, Inha University, 253 Yonghyun-Dong, Nam-ku, Incheon 402-751, Korea

cwchung@inha.ac.kr

Korean Chemical Engineering Research, August 2008, 46(4), 676-680(5), NONE Epub 10 September 2008

Download PDF

Abstract

Radio-frequency (rf) 마그네트론 스퍼터링법을 이용하여 SiO2(2000A)/Si 기판위에 TiN 박막이 증착되었다. N2/Ar 혼합가스에서 N2 가스의 농도, rf power, 공정압력 등을 변화시켜서 TiN 박막이 증착되었고 증착된 박막의 증착속도, 전기저항도 및 표면의 거칠기 등이 조사되었다. N2 가스의 농도가 증가함에 따라서 증착속도는 감소하였고 저항도는 증가하였으며 표면의 거칠기는 감소하였다. rf power가 증가함에 따라서 증착속도는 증가하였지만 저항도는 감소하였다. 증착압력의 증가에 따라서 증착속도는 큰 변화가 없었지만 저항도가 급격히 증가하였으며, 1 mTorr의 압력에서 2.46×10-4Ωcm의 저항도를 갖는 TiN 박막이 얻어졌다. 박막의 증착속도와 저항도는 상관관계가 있는 것이 관찰되었고 특히 증착압력이 박막의 저항도에 가장 큰 영향을 미치는 것을 알 수 있었다.

TiN thin films were deposited on a SiO2(2000A)/Si substrate by radio-frequency(rf) magnetron sputtering. TiN films were prepared under varying N2 concentration in N2/Ar gas mix, rf power and gas pressure, and investigated in terms of deposition rate, resistivity and surface morphology. As N2 concentration increased, the deposition rate and the surface roughness of the films decreased and the resistivity increased. With increasing rf power, the deposition rate increased but the resistivity was decreased. As gas pressure increased, little change in deposition rate was obtained but the resistivity rapidly increased. TiN film with resistivity of 2.46×10-4 Ωcm at 1 mTorr was formed. It was observed that there existed a correlation between the deposition rate and resistivity. In particular, the gas pressure has a strong influence on the resistivity of thin films.

Keywords

Titanium Nitride (TiN) Radio-Frequency (rf) Magnetron Sputtering Dry Etching Hard Mask

References

Huang CT, Duh JG, Surf. Coat. Technol., 81, 164 (1996)
Carson RT, Givens JH, Savage HS, Lee YW, Rigsbee JM, Croisant WJ, Thin Solid Films, 204, 285 (1991)
Ernsberger C, Nickerson J, Miller AE, Moulder J, J. Vac. Sci. Technol. A, A3, 2415 (1985)
Fracassi F, D’Agostino R, Lamendola R, Mangieri I, J. Vac. Sci. Technol. A, A13, 335 (1995)
Abraham SC, Gabriel CT, Zheng J, J. Vac. Sci. Technol. A, A15, 702 (1997)
Chiu HK, Lin TL, Hu Y, Leou KC, Lin HC, Twai MS, Huang TY, J. Vac. Sci. Technol. A, A19, 455 (2001)
Auger MA, Gago R, Fernaandez M, Sanchez O, Albella JM, Surf. Coat. Technol., 157, 26 (2002)
Hirose H, Suzuki S, Gotoh M, Sasaki T, Mater. Sci. Forum, 490-491, 601 (2005)
Kim H, Rossnagel SM, J. Vac. Sci. Technol. A, A20, 802 (2002)
Yi L, Zhang W, Wu J, Mao D, Semicond. Sci. Technol., 21, 250 (2006)
Lee DK, Lee JJ, Joo JH, Surf. Coat. Technol., 174-175, 1234 (2003)
Li YL, Lee DY, Min SR, Cho HN, Kim JS, Chung CW, Jpn. J. Appl. Phys., 47, 6896 (2008)