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- In relation to this article, we declare that there is no conflict of interest.
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Received November 5, 2010
Accepted November 27, 2010
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고에너지 양성자에 의해 결함을 증가시킨 그래핀 소자의 전기적 특성 변화 연구
High-energy Proton Irradiated Few Layer Graphene Devices
고려대학교 화공생명공학과, 136-701 서울시 성북구 안암동 5가
Department of Chemical and Biological Engineering, Korea Universiy, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713, Korea
Korean Chemical Engineering Research, June 2011, 49(3), 297-300(4), NONE Epub 8 June 2011
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Abstract
Mechanical exfoliation 방법에 의해 제작된 그래핀(Few Layer Graphene: FLG) 소자에 양성자를 조사하여 의도적으로 결함의 수를 증가시켰다. 그 후 공기중에 노출되었을 때와 진공상태에서 보관한 후에 측정된 전기적 특성을 확인하였다. 또한 UV에 노출시킨 후와 진공상태에서 열처리를 진행한 후에 전기적 특성의 변화들을 관찰하였다. 진공상태에서 보관한 그래핀 소자는 표면에 흡착되어 도펀트로 작용하게되는 species의 수가 감소하기 때문에 전류가 감소하는 결과를 나타내었다. UV에 노출된 상태에서는 오존에 의한 영향으로 약간의 전류 상승이 일어나지만 케리어의 이동도가 감소하게 된다. 반면 진공상태에서 열처리 후에는 전류는 매우 감소하게 되지만 결함과 도펀트에 의한 케리어 산란 현상이 감소하게 되므로 이동도는 크게 증가하게 된다.
High energy proton irradiations were performed on graphene devices to increase the number of defects intentionally. Proton energy and fluence were 6 MeV and 5×1015 cm^(-2), respectively. The defects in few layer graphene layer created by proton irradiations captured oxygen molecules that acted as p-type dopants. After the vacuum annealing, hole mobility was enhanced by the recovery of the defects and the desorption of the oxygen molecules. However,_x000D_
the drain current decreased after vacuum annealing due to the removal of the dopant molecules.
Keywords
References
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