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Received November 11, 2010
Accepted December 9, 2010
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습도의 영향에 따른 PDMA-b-PS 친수성 블록공중합체 박막의 패턴 조절

The Vertical and Lateral Ordering of PDMA-b-PS Block Copolymer Thin film via Control of Relative Humidity

고려대학교 화공생명공학과, 136-701 서울시 성북구 안암동 5가
Department of Chemical & Biological Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-701, Korea
joona@korea.ac.k
Korean Chemical Engineering Research, June 2011, 49(3), 352-356(5), NONE Epub 8 June 2011
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Abstract

리빙 프리 라디칼 중합법은 ATRP, NMP, RAFT 등의 방법이 있으며, 지난 수 십년간 매우 빠르게 발전해 왔다. 그 중에서 RAFT 중합법은 다른 방법들에 비해 최근에 학문적으로 크게 주목 받고 있다. RAFT 중합법은 다른 리빙 프리 라디칼 중합법에 합성할 수 있는 단량체의 종류나 합성의 제한이 비교적 작아서, 다양한 기능성 고분자를 쉽게 중합할 수 있으며, 합성한 고분자의 분자량 분포 또한 좁게 만들 수 있는 장점이 있다. 따라서 RAFT 중합법을 통해 다양한 형태의 블록 공중합체, 댄드리머 등을 합성하는데 이용되고 있다. 이 논문에서는 위와 같은 RAFT 중합법을 이용해, 친수성 블록을 갖는 새로운 블록 공중합체를 합성한다. Poly(ethylene-b-styrene)와 poly(ethylene-b-metharylate-bstyrene) 같은 블록 공중합체 박막을 이용해 용매 증발법에 의한 높은 수준의 정렬도를 갖는 연구가 진행, 보고되었다. 그리고 위의 2가지 연구에서 습도가 정렬도에 큰 영향을 미치는 것으로 보고되고 있다. 하지만 위의 연구에서 친수성 블록에 의한 영향을 명확하게 규명하지 못했다. 따라서 이 논문에서는 다른 친수성 블록을 갖는 poly(N,Ndimethylacrylamide-b-styrene)를 RAFT 중합법에 의해 합성하고, 이를 이용해 박막 내에서 용매 증발법 중의 습도에 의한 영향을 일반화하고자 한다.
In this paper, we prepared new type of hydrophilic block copolymers that exhibit the long-ranged lateral ordering in thin film. It was previously demonstrated that poly(ethyleneoxide-b-styrene) and poly(ethyleneoxide-b-metharylate-b-styrene) block copolymer thin films have a high degree of lateral ordering after solvent annealing process. In these cases, the relative humidity plays an important role in long-ranged lateral ordering. However, the origin of the humidity effect on the orders of these hydrophilic block copolymers is not fully understood. To investigate the effect of_x000D_ the humidity further, we prepared other hydrophilic poly(N,N-dimethylacrylamide-b-styrene)(PDMA-b-PS) block copolymers via RAFT polymerization. As with PEO-containing block copolymers, PDMA-b-PS block copolymers exhibit the long-ranged lateral ordering after solvent annealing process.

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