Articles & Issues
- Language
- korean
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received January 17, 2011
Accepted March 14, 2011
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
플라즈마 원자층 증착 방법을 이용한 N-doped ZnO 나노박막의 구조적·광학적·전기적 특성
Structural, Optical and Electrical Properties of N-doped ZnO Nanofilms by Plasma Enhanced Atomic Layer Deposition
전북대학교 반도체·화학공학부, 전북 전주시 덕진동 1가 664-14 1경원대학교 응용통계학과, 461-701 경기도 성남시 수정구 복정동 산 65
School of Semiconductor and Chemical Engineering, College of Engineering, Chonbuk National University, 664-14 1 Ga, Duckjin-dong, Duckjin-gu, Jeonju-si, Jeonbuk 561-756, Korea 1Department of Applied Statistics, Kyungwon University, 65 Bokjung dong, Sujeong gu Seongnam-si, Gyeonggi 461-701, Korea
Korean Chemical Engineering Research, June 2011, 49(3), 357-360(4), NONE Epub 8 June 2011
Download PDF
Abstract
플라즈마 원자층증착 방법을 이용하여 질소를 도핑한 산화아연 나노박막을 Si(111) 기판에 제조하였다. Zn(C2H5)2, O2 및 N2을 사용하여 rf 파워 세기를 50~300 W로 변화시키면서 N-doped ZnO 박막을 제조하였다. 박막의 구조적·광학적·전기적 특성을 각각 XRD, PL, Hall 효과를 측정하여 분석하였다. 플라즈마 rf 파워가 증가함에 따라 ZnO 나노 박막 내의 질소(N) 함유 농도가 높아지고, p형 ZnO의 특성을 보였다.
N-doped ZnO nanofilms were prepared by plasma enhanced atomic layer deposition method. Zn(C2H5)2, O2 and N2 were used as Zn, O and N sources, respectively, for N-doped ZnO films under variation of radio frequency (rf) power from 50~300W. Structural, optical and electrical properties of as-grown ZnO films were investigated with Xray diffractio (XRD),photoluminescence (PL) and Hall-effect measurements, respectively. Nitrogen content and p-type conductivity in ZnO nanofilms increased with the rf power.
References
Segawa Y, Ohtomo A, Kawasaki M, Koinuma H, Tang ZK, Yu P, Wong GKL, Phys. Status.Solidi b., “Growth of ZnO Thin Film by Laser MBE: Lasing of Excition at Room Temperature", 202, 669 (1997)
Look DC, Claflin B, Phys. Status Solid b., “P-type Doping and Devices Based on ZnO”, 241, 624 (2004)
Epurescu G, Dinescu G, Moldovan A, Birjega R, Dipietrantonio F, Verona E, Verardi P, Nistor LC, Ghica C, Van Tendeloo C, Dinescu M, Superlattices Microstructrues., “p-type ZnO thin Films Grown by RF Plasma Beam Assisted Pulsed Laser Deposition”, 42, 79 (2007)
Nanto H, Morita T, Habara H, Kondo K, Douguchi Y, Minami T, Sensors Actuators B., “Doping Effect of SnO2 on Gas Sensing Characteristics of Sputtered ZnO Thin Film Chemical Sensor", 35, 384 (1996)
Umar A, Rahman MM, Vaseem M, Hahn YB, Electrochem. Commun., “Ultrasensitive Cholesterol Biosensor Based on Low-temperature Grown ZnO Nanoparticles", 11, 118 (2009)
Park SG, Tark SJ, Lee JS, Lim HJ, Kim DH, Sol. Energy Mater. Sol. Cells., “Effects of Intrinsic ZnO Buffer Layer Based on P3HT/PCBM Organic Solar Cells with Al-doped ZnO Electrode", 93, 1020 (2009)
Lu L, Li R, Fan K, Peng T, Sol. Energy., “Effet of Annealing Condition on the Photoelectronchemical Properties of Dye-sensitized Solar Cells Made with ZnO Nanoparticles", 84, 844 (2010)
Zhang CY, Mater. Sci.Semicond. Process., “The Influence of Post-growth Annealing on Optical and Electrical Properties of p-type ZnO Films", 10, 215 (2007)
Tvarozek V, Shterva K, Novotny I, Kovac J, Sutta P, Smanek R, Vincze A, Vacuum., “RF Diode Reactive Sputtering of n-and ptype Zinc Oxide Thin Films", 82, 166 (2008)
Cao P, Zhao DX, Zhang JY, Shen DZ, Lu YM, Yao B, Li BH, Bai Y, Fan XW, Appl. Surf. Sci., “Optical and Electrical Properties of p-type ZnO Fabricated by NH3 Plasma Post-treated ZnO Thin Films", 254(9), 2900 (2008)
Fan JC, Xie Z, Materials Science and Engineering b., “Effect of Substrate Temperature on Structural, Electrical and Optical Properties of As-doped ZnO Films", 150, 61 (2008)
Pan XH, Ye ZZ, Li JS, Gu XQ, Zeng YJ, He HP, Zhu LP, Che Y, Appl. Surf. Sci., “Fabrication fo Sb-doped p-type ZnO tin Films by Pulsed Laser Deposition", 253(11), 5067 (2007)
Xiao B, Ye ZZ, Zhang YZ, Zeng YJ, Zhu LP, Zhao BH, Appl. Surf. Sci., “Fabrication of p-type Li-doped ZnO Films by Pulsed Laser Deposition", 253(2), 895 (2006)
Lyons JL, Janotti A, Van de Walle CG, Appl. Phys. Lett., “Why Nitrogen Cannot Lead to p-type Conductivity in ZnO", 95, 252105 (2009)
Vaithianathan V, Hishita S, Moon JH, Kim SS, Thin Solid Films, “Dependence of Photoluminescence and Electrical Properties with Rapid Thermal Annealing in Nitrogen-implanted ZnO Films", 515(17), 6927 (2007)
Chou SM, Mon MH, Leu IC, Appl. Surf. Sci., “Synthesis of p-type Al-N Codoped ZnO Films Using N2O as a Reactive Gas by RF Magnetron Sputtering", 225, 2958 (2008)
Wang H, Ho HP, Lo KC, Cheah KW, J. Phys. D-Appl. Phys., “Growth of ptype ZnO Thin-films by (N,Ga) co-doped Using DMHy Dopant", 40, 4682 (2007)
Look DC, Claflin B, Phys. Status Solid b., “P-type Doping and Devices Based on ZnO”, 241, 624 (2004)
Epurescu G, Dinescu G, Moldovan A, Birjega R, Dipietrantonio F, Verona E, Verardi P, Nistor LC, Ghica C, Van Tendeloo C, Dinescu M, Superlattices Microstructrues., “p-type ZnO thin Films Grown by RF Plasma Beam Assisted Pulsed Laser Deposition”, 42, 79 (2007)
Nanto H, Morita T, Habara H, Kondo K, Douguchi Y, Minami T, Sensors Actuators B., “Doping Effect of SnO2 on Gas Sensing Characteristics of Sputtered ZnO Thin Film Chemical Sensor", 35, 384 (1996)
Umar A, Rahman MM, Vaseem M, Hahn YB, Electrochem. Commun., “Ultrasensitive Cholesterol Biosensor Based on Low-temperature Grown ZnO Nanoparticles", 11, 118 (2009)
Park SG, Tark SJ, Lee JS, Lim HJ, Kim DH, Sol. Energy Mater. Sol. Cells., “Effects of Intrinsic ZnO Buffer Layer Based on P3HT/PCBM Organic Solar Cells with Al-doped ZnO Electrode", 93, 1020 (2009)
Lu L, Li R, Fan K, Peng T, Sol. Energy., “Effet of Annealing Condition on the Photoelectronchemical Properties of Dye-sensitized Solar Cells Made with ZnO Nanoparticles", 84, 844 (2010)
Zhang CY, Mater. Sci.Semicond. Process., “The Influence of Post-growth Annealing on Optical and Electrical Properties of p-type ZnO Films", 10, 215 (2007)
Tvarozek V, Shterva K, Novotny I, Kovac J, Sutta P, Smanek R, Vincze A, Vacuum., “RF Diode Reactive Sputtering of n-and ptype Zinc Oxide Thin Films", 82, 166 (2008)
Cao P, Zhao DX, Zhang JY, Shen DZ, Lu YM, Yao B, Li BH, Bai Y, Fan XW, Appl. Surf. Sci., “Optical and Electrical Properties of p-type ZnO Fabricated by NH3 Plasma Post-treated ZnO Thin Films", 254(9), 2900 (2008)
Fan JC, Xie Z, Materials Science and Engineering b., “Effect of Substrate Temperature on Structural, Electrical and Optical Properties of As-doped ZnO Films", 150, 61 (2008)
Pan XH, Ye ZZ, Li JS, Gu XQ, Zeng YJ, He HP, Zhu LP, Che Y, Appl. Surf. Sci., “Fabrication fo Sb-doped p-type ZnO tin Films by Pulsed Laser Deposition", 253(11), 5067 (2007)
Xiao B, Ye ZZ, Zhang YZ, Zeng YJ, Zhu LP, Zhao BH, Appl. Surf. Sci., “Fabrication of p-type Li-doped ZnO Films by Pulsed Laser Deposition", 253(2), 895 (2006)
Lyons JL, Janotti A, Van de Walle CG, Appl. Phys. Lett., “Why Nitrogen Cannot Lead to p-type Conductivity in ZnO", 95, 252105 (2009)
Vaithianathan V, Hishita S, Moon JH, Kim SS, Thin Solid Films, “Dependence of Photoluminescence and Electrical Properties with Rapid Thermal Annealing in Nitrogen-implanted ZnO Films", 515(17), 6927 (2007)
Chou SM, Mon MH, Leu IC, Appl. Surf. Sci., “Synthesis of p-type Al-N Codoped ZnO Films Using N2O as a Reactive Gas by RF Magnetron Sputtering", 225, 2958 (2008)
Wang H, Ho HP, Lo KC, Cheah KW, J. Phys. D-Appl. Phys., “Growth of ptype ZnO Thin-films by (N,Ga) co-doped Using DMHy Dopant", 40, 4682 (2007)
