Articles & Issues
- Language
- korean
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received December 1, 2010
Accepted January 13, 2011
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
태양전지용 단결정 실리콘 잉곳 생산성 증대를 위한 초크랄스키 공정 최적 설계
Optimal Design of Cz Process for Increasing a Productivity of Single Crystal Si Solar Cell Ingot
영남대학교 공과대학 화학공학부, 712-749 경북 경산시 대동 214-1번지
School of Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeongsan-si, Gyeongbuk 712-749, Korea
Korean Chemical Engineering Research, August 2011, 49(4), 432-437(6), NONE Epub 3 August 2011
Download PDF
Abstract
최근 산업에서는 Czochralski(Cz) 공정에서 ingot의 생산성을 높이고 동시에 에너지 소비를 적절하게 할 수 있는 최적 설계가 요구되고 있다. 본 연구에서는 컴퓨터 시뮬레이션을 이용하여 현장에서 적용 가능한 설계 인자인 도가니 (crucible) 크기, shield 모양, heater의 위치를 변동하면서 가장 최적의 생산성 및 전력 절감 설계를 찾아내는 연구를 수행하였다. 대상 공정은 직경 8 인치 태양전지용 ingot 생산 공정으로 생산성 증대를 위해 도가니 크기를 22인치에서 24인치로 바꾸어 안정적 생산이 가능한 최적설계를 찾았다. 이때 산업에서 외형변화가 허용되지 않아 단열두께만 줄여 최적설계를 찾았다.
Recently, industry needs a new design of Czochralski(Cz) process for higher productivity with reasonable energy consumption. In this study, we carried out computational simulations for finding out a new optimal design of Cz process with variables which can be applied in real industry such as location of heater, shape of shield and crucible size. Objective process was Cz process which can be produced 8 inch diameter Si ingot for solar cell and we acquired an optimal design for higher productivity, low power consumption with stable production condition. For higher productivity we also change the crucible diameter from 22 inches to 24 inches with changing insulation thickness only because the process housing size could not be changed in industry.
Keywords
References
Sinno T, Dornberger E, von Ammon W, Brown RA, Dupret F, Mater. Sci. Eng. Reports., ㄱ28, 149 (2000)
Tomzig E, von Ammon W, Dornberger E, Lamber U, Zulehner W, Microelectron. Eng., 45(2), 113 (1999)
Egorov YE, Makarov YN, Rudinsky EA, Smirnov EM, Zhmakin AI, Dunham, Nelson JS (Eds.),, Material Research Society Symposium Proceedings., 490, 181 (1998)
Gevelber M, Wilson D, Duanmu N, J. Cryst. Growth, 230(1-2), 217 (2001)
Assaker R, Van den Bogaert N, Dupret F, J. Cryst. Growth., 180, 450 (1997)
Kinney TA, Bornside DE, Brawn RA, Kim KM, J. Cryst. Growth., 126, 413 (1993)
Van den Bogaert N, Dupret F, J. Cryst. Growth., 171, 65 (1997)
Van den Bogaert N, Dupret F, J. Cryst. Growth., 171, 77 (1997)
Tomzig E, von Ammon W, Dornberger E, Lamber U, Zulehner W, Microelectron. Eng., 45(2), 113 (1999)
Egorov YE, Makarov YN, Rudinsky EA, Smirnov EM, Zhmakin AI, Dunham, Nelson JS (Eds.),, Material Research Society Symposium Proceedings., 490, 181 (1998)
Gevelber M, Wilson D, Duanmu N, J. Cryst. Growth, 230(1-2), 217 (2001)
Assaker R, Van den Bogaert N, Dupret F, J. Cryst. Growth., 180, 450 (1997)
Kinney TA, Bornside DE, Brawn RA, Kim KM, J. Cryst. Growth., 126, 413 (1993)
Van den Bogaert N, Dupret F, J. Cryst. Growth., 171, 65 (1997)
Van den Bogaert N, Dupret F, J. Cryst. Growth., 171, 77 (1997)
