Articles & Issues
- Language
- korean
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received May 2, 2011
Accepted July 31, 2011
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
전기증착법을 이용한 ZnO 막대구조의 형성 및 염료감응형 태양전지에의 응용
Fabrication of ZnO Rod by Electrodeposition and Its Application to Dye Sensitized Solar Cell
인하대학교 화학공학과, 402-701 인천시 남구 용현동 253
Department of Chemical Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
Korean Chemical Engineering Research, February 2012, 50(1), 162-166(5), NONE Epub 2 February 2012
Download PDF
Abstract
본 연구에서는 전해증착법과 열처리를 통하여 ITO 투명전극 위에 고밀도의 ZnO 막대구조를 형성하는 방법을 조사하였다. 증착과정에서 Zn(OH)2와 ZnO가 함께 형성되는 것을 고려할 때 전기화학적 ZnO 증착효율은 33% 이하를 나타내었다. 500 ℃열처리 후 ZnO는 (002)를 선택적으로 갖는 결정구조를 형성하며, 나노막대 구조의 성장속도는 0.986 μm/hr로 측정되었다. 그리고 전기화학적으로 제조한 ZnO 막대를 염료감응 태양전지의 전극으로 사용시 측정된 전지효율은 0.21%로서 태양전지용 전극으로서의 가능성을 확인하였다.
High density of ZnO nanorods were fabricated by electrochemical deposition and subsequent heat treatment. Formation of Zn(OH)2 and ZnO during electrodeposition indicated that the electrodeposition efficiency of ZnO was below 33%. ZnO rod has a preferential (200) growth plane after heat treatment at 500 ℃ and the growth rate of ZnO rod was measured to be 0.986 μm/hr. Dye sensitized solar cell(DSC) showed the efficiency of 0.21% when electrochemically prepared ZnO rod was used as an electrode. It suggests the possible application of ZnO rod structure in the DSC.
Keywords
References
Goldberger J, Sirbuly DJ, Law M, Yang P, J. Phys. Chem. B, 109(1), 9 (2005)
Saito N, Haneda H, Sekiguchi T, Ohashi N, Sakaguchi I, Koumoto K, Adv. Mater., 14(6), 418 (2002)
Wan Q, Li QH, Chen YJ, Wang TH, He XL, Li JP, Lin CL, Appl. Phys. Lett., 84(18), 3654 (2004)
Law M, Sirbuly DJ, Johnson JC, Goldberger J, Saykally RJ, Yang P, Science., 305(5688), 1269 (2004)
Keis K, Magnusson E, Lindstorm H, Lindquist SE, Hagfelt A, Sol. Energy Mater. Sol. Cells., 73(1), 51 (2002)
Duan XF, Lieber CM, Adv. Mater., 12(4), 298 (2000)
Li SY, Lin P, Lee CY, Tseng TY, J.Appl. Phys., 95(7), 3711 (2004)
Sen S, Leary DJ, Bauer CL, Thin Solid Films., 94(1), 7 (1982)
Haase M, Weller H, Henglein A, J. Phys.Chem., 92(2), 482 (1998)
Park WI, Kim DH, Jung SW, Yi GC, Appl. Phys. Lett., 80(22), 4232 (2002)
Roy VAL, Djurisic AB, Chan WK, Gao J, Lui HG, Surya C, Appl. Phys.Lett., 83(1), 141 (2003)
Izaki M, Omi T, Appl. Phys. Lett., 68(17), 2439 (1996)
Donderis V, Hernandez-Fenollosa MA, Damonte LC, Mari B, Cembrero J, Superlattices Microstruct., 42(1-6), 461 (2007)
Vayssieres L, Keis K, Lindquist SE, Hagfeldt A, J. Phys. Chem. B, 105(17), 3350 (2001)
Vayssieres L, Adv. Mater., 15(5), 464 (2003)
Yadav HK, Sreenivas K, Gupta V, Singh SP, Katiyar RS, J. Mater. Res., 22(9), 2404 (2007)
Pauporte T, Lincot D, J. Electrochem. Soc., 148(4), C310 (2001)
Fujimura N, Nishihara T, Goto S, Ito T, J. Cryst. Growth., 115(1-4), 816 (1991)
Saito N, Haneda H, Sekiguchi T, Ohashi N, Sakaguchi I, Koumoto K, Adv. Mater., 14(6), 418 (2002)
Wan Q, Li QH, Chen YJ, Wang TH, He XL, Li JP, Lin CL, Appl. Phys. Lett., 84(18), 3654 (2004)
Law M, Sirbuly DJ, Johnson JC, Goldberger J, Saykally RJ, Yang P, Science., 305(5688), 1269 (2004)
Keis K, Magnusson E, Lindstorm H, Lindquist SE, Hagfelt A, Sol. Energy Mater. Sol. Cells., 73(1), 51 (2002)
Duan XF, Lieber CM, Adv. Mater., 12(4), 298 (2000)
Li SY, Lin P, Lee CY, Tseng TY, J.Appl. Phys., 95(7), 3711 (2004)
Sen S, Leary DJ, Bauer CL, Thin Solid Films., 94(1), 7 (1982)
Haase M, Weller H, Henglein A, J. Phys.Chem., 92(2), 482 (1998)
Park WI, Kim DH, Jung SW, Yi GC, Appl. Phys. Lett., 80(22), 4232 (2002)
Roy VAL, Djurisic AB, Chan WK, Gao J, Lui HG, Surya C, Appl. Phys.Lett., 83(1), 141 (2003)
Izaki M, Omi T, Appl. Phys. Lett., 68(17), 2439 (1996)
Donderis V, Hernandez-Fenollosa MA, Damonte LC, Mari B, Cembrero J, Superlattices Microstruct., 42(1-6), 461 (2007)
Vayssieres L, Keis K, Lindquist SE, Hagfeldt A, J. Phys. Chem. B, 105(17), 3350 (2001)
Vayssieres L, Adv. Mater., 15(5), 464 (2003)
Yadav HK, Sreenivas K, Gupta V, Singh SP, Katiyar RS, J. Mater. Res., 22(9), 2404 (2007)
Pauporte T, Lincot D, J. Electrochem. Soc., 148(4), C310 (2001)
Fujimura N, Nishihara T, Goto S, Ito T, J. Cryst. Growth., 115(1-4), 816 (1991)
