Articles & Issues
- Language
- korean
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received August 3, 2011
Accepted August 30, 2011
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
양극산화를 이용한 산화니켈 박막 제조
Preparation of Nickel Oxide Films by Anodizing
경기대학교 화학공학과, 443-760 경기도 수원시 영통구 이의동 산94-6
Department of Chemical Engineering, Kyonggi University, 94-6 Yiui-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-760, Korea
jhjung@kgu.ac.kr
Korean Chemical Engineering Research, April 2012, 50(2), 204-210(7), NONE Epub 30 March 2012
Download PDF
Abstract
니켈에 양극산화법을 적용하여 기존의 선행연구에서 보고되었던 nm 단위의 두께를 극복하고 최대 2.3 μm 두께의 산화니켈 박막을 제조하였다. 전해질은 에틸렌글리콜을 용매로 사용하였으며 F- 이온을 공급하기 위해 NH4F를 첨가하였다. 전압을 40, 60, 80 V로 변화시키며 최대 12시간까지 양극산화반응을 진행하였으며 시간과 전압을 증가시킴에 따라 산화니켈 박막의 두께도 증가하였다. 그러나 80 V 전압에서는 급격한 산화 작용에 따른 니켈의 파괴가 나타났다. XRD 분석 결과 양극산화에 의해 NiO가 생성되었음을 확인하였다.
Nickel oxide thin films with 2.3 μm thickness were prepared in order to overcome limitations of thickness with nm dimension by anodizing. For the electrolyte, ethylene glycol was used as solvent, and NH4F was added for source of F- ions. The anodizing experiments were carried out on various voltages such as 40, 60 V and 80 V for 12 hours. The thickness of NiO was changed according to the anodizing time and the voltage. However, destruction of Ni caused by rapid oxidation reaction occurred at 80 V. XRD results show that NiO was successfully created by_x000D_
anodizing.
Keywords
References
Abdel-Aal EA, Rashad MM, Hydrometallurgy., 74, 189 (2004)
Fish RH, Michaels JN, Moore RS, Heinemann H, J. Catal., 123(1), 4 (1990)
Park SH, Yoo SJ, Lim JW, Yun SU, Cha IY, Sung YE, J. Korean Electrochem. Soc., 12(3), 251 (2009)
Kim DC, Seo S, Ahn SE, Suh DS, Lee MJ, Park BH, Yoo IK, Baek IG, Kim HJ, Yim EK, Lee JE, Park SO, Kim HS, Chung U-In, Moon JT, Ryu BI, Appl. Phys. Lett., 88(20), 202102 (2009)
Brenscheidt T, Nitschke F, Sollner O, Wendt H, Electrochim. Acta, 46(6), 783 (2001)
Lee JB, Lee SC, Lee SM, Lee SY, Kim HJ, Trans. of the Korean Hydrogen and New Energy Society., 17(1), 39 (2006)
Yuan YF, Xia XH, Wu JB, Chen YB, Yang JL, Guo SY, Electrochim. Acta, 56(3), 1208 (2011)
Dalavi DS, Suryavanshi MJ, Patil DS, Mali SS, Moholkar AV, Kalagi SS, Vanalkar SA, Kang SR, Kim JH, Patil PS, Appl. Surf. Sci., 257(7), 2647 (2011)
Seo S, Lee MJ, Seo DH, Jeoung EJ, Yoo IK, Hwang IR, Kim SH, Byun IS, Kim JS, Choi JS, Park HB, Appl. Phys. Lett., 85, 5655 (2004)
Irwin MD, Buchholz DB, Hains AW, Chang RPH, Marks TJ, PNAS., 105(8), 2783 (2008)
Tsu R, Esaki L, Ludeke R, Phys. Rev. Lett., 23, 977 (1969)
Seikea T, Nagaia J, Sol. Energy Mater., 22(2-3), 107 (1991)
Sato H, Minami T, Takata S, Yamada T, Thin Solid Films, 236(1-2), 27 (1993)
Hotovy I, Blue D, Hock S, Bennewitz O, Vacuum., 50, 41 (1998)
Lampert CM, Omstead TR, Yu PC, Sol. Energy Mater., 14(3-5), 161 (1986)
Pramanik P, Bhattachraya S, J. Electrochem. Soc., 137(12), 3869 (1990)
Varkey AJ, Fort AF, Thin Solid Films., 235, 47 (1993)
Chigane M, Ishikawa M, J. Chem. Soc., Faraday Trans., 94(24), 3665 (1998)
Utriainen M, Kroger-Laukkanen M, Niinisto L, Mater. Sci. Eng., B., 54, 98 (1998)
Surca A, Orel B, Pihlar B, Bukovec P, J. Electroanal. Chem., 408(1-2), 83 (1996)
Xie Y, Wang W, Qian Y, Yang L, Chen Z, J. Cryst. Growth., 167, 656 (1996)
Misho RH, Murad WA, Fatahalah GH, Abdul-Aziz IM. Al-Doori HM, Phys. Status Solidi Appl. Res., 109(2), K101 (1988)
Kadam LD, Bhosale CH, Patil PS, Tr. J. Phys., 21(10), 1037 (1997)
Lee Y, Jung J, Korean Chem. Eng. Res., 49(1), 28 (2011)
MacDougall B, Cohen M, J. Electrochem. Soc., 121(9), 1152 (1974)
Zamin M, Ives MB, J. Electrochem. Soc., 126(3), 470 (1979)
MacDougall B, Mitchell DF, Graham MJ, J. Electrochem. Soc., 127(6), 1248 (1980)
Visscher W, Barendrecht E, J. Appl. Electrochem., 10, 269 (1980)
Chukalovskaya TV, Karichev ZR, Vostryakova LA, Protection of metals., 13(2), 185 (1977)
Jeong SH, Jung SH, Lee KH, J. Korean Ind. Eng. Chem., 16(4), 461 (2005)
Park IH, Lee JW, Shin B, Chung CW, Theor. Appl. Chem. Eng., 11(1), 935 (2005)
Lalauze RL, Meunier JH, Oxid. Met., 12(2), 183 (1978)
Kim H, Chang YH, Hahm YM, J. Korean Ind. Eng. Chem., 8(5), 756 (1997)
Mor GK, Varghese OK, Paulose M, Shankar K, Grimes CA, Sol. Energy. Mater. Sol. Cells., 90, 2011 (2006)
Foll H, Christophersen M, Carstensen J, Hasse G, Mat. Sci. Eng. Rep., 39, 93 (2002)
Fish RH, Michaels JN, Moore RS, Heinemann H, J. Catal., 123(1), 4 (1990)
Park SH, Yoo SJ, Lim JW, Yun SU, Cha IY, Sung YE, J. Korean Electrochem. Soc., 12(3), 251 (2009)
Kim DC, Seo S, Ahn SE, Suh DS, Lee MJ, Park BH, Yoo IK, Baek IG, Kim HJ, Yim EK, Lee JE, Park SO, Kim HS, Chung U-In, Moon JT, Ryu BI, Appl. Phys. Lett., 88(20), 202102 (2009)
Brenscheidt T, Nitschke F, Sollner O, Wendt H, Electrochim. Acta, 46(6), 783 (2001)
Lee JB, Lee SC, Lee SM, Lee SY, Kim HJ, Trans. of the Korean Hydrogen and New Energy Society., 17(1), 39 (2006)
Yuan YF, Xia XH, Wu JB, Chen YB, Yang JL, Guo SY, Electrochim. Acta, 56(3), 1208 (2011)
Dalavi DS, Suryavanshi MJ, Patil DS, Mali SS, Moholkar AV, Kalagi SS, Vanalkar SA, Kang SR, Kim JH, Patil PS, Appl. Surf. Sci., 257(7), 2647 (2011)
Seo S, Lee MJ, Seo DH, Jeoung EJ, Yoo IK, Hwang IR, Kim SH, Byun IS, Kim JS, Choi JS, Park HB, Appl. Phys. Lett., 85, 5655 (2004)
Irwin MD, Buchholz DB, Hains AW, Chang RPH, Marks TJ, PNAS., 105(8), 2783 (2008)
Tsu R, Esaki L, Ludeke R, Phys. Rev. Lett., 23, 977 (1969)
Seikea T, Nagaia J, Sol. Energy Mater., 22(2-3), 107 (1991)
Sato H, Minami T, Takata S, Yamada T, Thin Solid Films, 236(1-2), 27 (1993)
Hotovy I, Blue D, Hock S, Bennewitz O, Vacuum., 50, 41 (1998)
Lampert CM, Omstead TR, Yu PC, Sol. Energy Mater., 14(3-5), 161 (1986)
Pramanik P, Bhattachraya S, J. Electrochem. Soc., 137(12), 3869 (1990)
Varkey AJ, Fort AF, Thin Solid Films., 235, 47 (1993)
Chigane M, Ishikawa M, J. Chem. Soc., Faraday Trans., 94(24), 3665 (1998)
Utriainen M, Kroger-Laukkanen M, Niinisto L, Mater. Sci. Eng., B., 54, 98 (1998)
Surca A, Orel B, Pihlar B, Bukovec P, J. Electroanal. Chem., 408(1-2), 83 (1996)
Xie Y, Wang W, Qian Y, Yang L, Chen Z, J. Cryst. Growth., 167, 656 (1996)
Misho RH, Murad WA, Fatahalah GH, Abdul-Aziz IM. Al-Doori HM, Phys. Status Solidi Appl. Res., 109(2), K101 (1988)
Kadam LD, Bhosale CH, Patil PS, Tr. J. Phys., 21(10), 1037 (1997)
Lee Y, Jung J, Korean Chem. Eng. Res., 49(1), 28 (2011)
MacDougall B, Cohen M, J. Electrochem. Soc., 121(9), 1152 (1974)
Zamin M, Ives MB, J. Electrochem. Soc., 126(3), 470 (1979)
MacDougall B, Mitchell DF, Graham MJ, J. Electrochem. Soc., 127(6), 1248 (1980)
Visscher W, Barendrecht E, J. Appl. Electrochem., 10, 269 (1980)
Chukalovskaya TV, Karichev ZR, Vostryakova LA, Protection of metals., 13(2), 185 (1977)
Jeong SH, Jung SH, Lee KH, J. Korean Ind. Eng. Chem., 16(4), 461 (2005)
Park IH, Lee JW, Shin B, Chung CW, Theor. Appl. Chem. Eng., 11(1), 935 (2005)
Lalauze RL, Meunier JH, Oxid. Met., 12(2), 183 (1978)
Kim H, Chang YH, Hahm YM, J. Korean Ind. Eng. Chem., 8(5), 756 (1997)
Mor GK, Varghese OK, Paulose M, Shankar K, Grimes CA, Sol. Energy. Mater. Sol. Cells., 90, 2011 (2006)
Foll H, Christophersen M, Carstensen J, Hasse G, Mat. Sci. Eng. Rep., 39, 93 (2002)
