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Received July 18, 2014
Accepted September 17, 2014
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탄화규소 결정상의 종류가 탄화규소 표면에 ZSM-5가 형성되는데 미치는 영향
Effect of SiC Crystal Phase on Growing ZSM-5 on the Surface of SiC
한국세라믹기술원, 153-801 서울 금천구 디지털로10길 77
Energy & Environmental Devision, Korea Institute of Ceramic Engineering and Technology, 77 Digital-ro, 10-gil, Geumcheon-gu, Seoul 153-801, Korea
srkim@kicet.re.kr
Korean Chemical Engineering Research, April 2015, 53(2), 247-252(6), 10.9713/kcer.2015.53.2.247 Epub 30 March 2015
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Abstract
α-상 과 β-상 두 가지 종류의 탄화규소(SiC) 입자 표면에 수열 합성 방법으로 ZSM-5 결정을 형성하였다. SiC는 50 μm 이상이 되는 크기의 입자를 사용하였으며, ZSM-5 결정이 SiC 표면에서부터 성장하도록 유도하기 위하여 합성 단계에 앞서 SiC 표면에 산화층을 형성하였으며, 수열합성 온도와 시간을 변화시켜 보았다. 그 결과 β-SiC는 900 °C 조건에서도 산화막이 형성되었으며, 특히 150 °C 합성 조건에서 ZSM-5가 β-SiC 표면에서부터 성장하였음이 뚜렷이 관찰되었다. 200 °C 조건에서는 ZSM-5의 결정의 크기가 성장할 뿐 아니라, 시간의 증가에 따라 결정의 형태가 뚜렷해지고 SiC 표면에 도포되는 양이 증가하는 것을 확인할 수 있었다.
ZSM-5 crystals grew on the surface of α-SiC and β-SiC particles by hydrothermal synthesis method. SiC particles which were > 50 μm of size were used, and oxide layer were developed on the surface of the particles to induce growth of ZSM-5 from the surface. Then, synthesis time and temperature condition were considered growing ZSM-5. In this study, oxide layer was formed on β-SiC at 900 °C in air, and it was controlled to grow ZSM-5 grew from the β-SiC_x000D_
surface with 150 °C synthesis condition. This is due to Si-O-Si or Si-O-Al bond, which is basic framework of ZSM-5 can be easily formed, from the silicon oxide film on the surface of β-SiC. When the synthesis temperature was 200 °C, the size of ZSM-5 was increased, and it covered much area of the SiC surface with better crystal shapes with longer synthesis time.
Keywords
References
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Yang GH, He JJ, Yoneyama Y, Tan YS, Han YZ, Tsubaki N, Appl. Catal. A: Gen., 329, 99 (2007)
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Rauscher M, Selvam T, Schwieger W, Freude D, Micropor. Mesopor. Mat., 75, 195 (2004)
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Ledoux MJ, Pham-Huu C, Cattech, 5, 226 (2001)
Moene R, Makkee M, Moulijn JA, Appl. Catal. A: Gen., 167(2), 321 (1998)
Krawiec P, Kaskel S, J. Solid State Chem., 179, 2281 (2006)
Ivanova S, Vanhaecke E, Louis B, Libs S, Ledoux MJ, Rigolet S, Pham-Huu C, ChemSusChem, 1, 851 (2008)
Losch P, Boltz M, Soukup K, Song IH, Yun HS, Louis B, Micropor. Mesopor. Mat., 188, 99 (2014)
Jung EJ, Lee YJ, Kim SR, Kwon WT, Choi DJ, Kim Y, Adv. Appl. Ceram., 113, 352 (2014)
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Merle-Mejean T, Abdelmounm E, Quintard P, J. Mol. Struc., 349, 105 (1995)
Kwon WT, Kim SR, Kim Y, Lee YJ, Won J, Park WK, Oh SC, Mater. Sci. Forum., 724, 45 (2012)
Shirazi L, Jamshidi E, Ghasemi MR, Cryst. Res. Technol., 43, 1300 (2008)
Nawaz Z, Xiaoping T, Fei W, Korean J. Chem. Eng., 26(6), 1528 (2009)
Kim HG, Yang YC, Jeong KE, Kim TW, Jeong SY, Kim CU, Jhung SH, Lee KY, Korean Chem. Eng. Res., 51(4), 418 (2013)