Articles & Issues
- Language
- korean
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received October 13, 2015
Accepted November 12, 2015
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
P형 GaN 중간층이 삽입된 녹색 발광다이오드 특성 평가
Evaluation of green light Emitting diode with p-type GaN interlayer
단국대학교 화학공학과, 16890 경기도 용인시 수지구 죽전동 126
Department of Chemical Engineering, Dankook University, 126, Jukjeon-dong, Suji-gu, Yongin, Gyeonggi, 16890, Korea
jangmountain@dankook.ac.kr
Korean Chemical Engineering Research, April 2016, 54(2), 274-277(4), 10.9713/kcer.2016.54.2.274 Epub 5 April 2016
Download PDF
Abstract
녹색 발광다이오드의 다양자우물층과 전자막이층 사이에 p형 중간층 삽입이 소자의 특성에 미치는 영향이 소자 시뮬레이션을 통하여 연구되었다. 중간층의 Mg 도핑 깊이에 따른 발광다이오드의 전류-전압, 발광파장, 누설전류, 광효율 특성이 분석되었으며 최적의 발광 특성을 나타내는 소자 구조가 제시되었다. 중간층 전 영역이 p형으로 도핑된 구조와 30 nm까지 도핑된 구조는 누설전류 억제를 통하여 녹색 발광다이오드의 가장 큰 문제점 중에 하나인 효율 드룹 현상을 효과적으로 완화하였다. 특히, 30 nm까지 도핑된 구조는 전류-전압 및 발광 특성에 있어서 가장 향상된 결과를 보였다.
Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.
Keywords
References
Baik KH, Kim H, Kim J, Jung S, Jang S, Appl. Phys. Lett., 103, 091107 (2013)
Park KS, Swain B, Kang LS, Lee CG, Uhm S, Hong HS, Shim JG, Park JJ, Appl. Chem. Eng., 25(4), 414 (2014)
Chung W, Yu HJ, Park SH, Chun BH, Kim SH, Korean Chem. Eng. Res., 49(3), 320 (2011)
Jun Z, Zhuo XJ, Li DW, Yu L, Li K, Zhang YW, Diao JS, Wang XF, Li ST, IEEE Photonics Technol. Lett., 27(2), 117 (2015)
Piprek J, Phys. Status Solidi A-Appl. Res., 207(10), 2217 (2010)
Mukai T, Yamada M, Nakamura S, Jpn. J. Appl. Phys. 1, 38, 3976 (1999)
Hsueh TH, Sheu JK, Lai WC, Wang YT, Kuo HC, Wang SC, IEEE Photonics Technol. Lett., 21, 414 (2009)
Meneghini M, Trivellin N, Meneghesso G, Zanoni E, Zehnder U, Hahn B, J. Appl. Phys., 106, 114508 (2009)
Laubsch A, Sabathil M, Baur J, Peter M, Hahn B, IEEE Trans. Electron Devices, 57, 79 (2010)
Knauer A, Brunner F, Kolbe T, Kuller V, Rodriguez H, Einfeldt S, Weyers M, Kneissl M, Proc. SPIE, 7231, 72310G (2009)
Vampola KJ, Iza M, Keller S, DenBaars SP, Nakamura S, Appl. Phys. Lett., 94, 061116 (2009)
Park KS, Swain B, Kang LS, Lee CG, Uhm S, Hong HS, Shim JG, Park JJ, Appl. Chem. Eng., 25(4), 414 (2014)
Chung W, Yu HJ, Park SH, Chun BH, Kim SH, Korean Chem. Eng. Res., 49(3), 320 (2011)
Jun Z, Zhuo XJ, Li DW, Yu L, Li K, Zhang YW, Diao JS, Wang XF, Li ST, IEEE Photonics Technol. Lett., 27(2), 117 (2015)
Piprek J, Phys. Status Solidi A-Appl. Res., 207(10), 2217 (2010)
Mukai T, Yamada M, Nakamura S, Jpn. J. Appl. Phys. 1, 38, 3976 (1999)
Hsueh TH, Sheu JK, Lai WC, Wang YT, Kuo HC, Wang SC, IEEE Photonics Technol. Lett., 21, 414 (2009)
Meneghini M, Trivellin N, Meneghesso G, Zanoni E, Zehnder U, Hahn B, J. Appl. Phys., 106, 114508 (2009)
Laubsch A, Sabathil M, Baur J, Peter M, Hahn B, IEEE Trans. Electron Devices, 57, 79 (2010)
Knauer A, Brunner F, Kolbe T, Kuller V, Rodriguez H, Einfeldt S, Weyers M, Kneissl M, Proc. SPIE, 7231, 72310G (2009)
Vampola KJ, Iza M, Keller S, DenBaars SP, Nakamura S, Appl. Phys. Lett., 94, 061116 (2009)
