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Received August 31, 2016
Accepted September 22, 2016
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구리 전해 도금을 이용한 실리콘 관통 비아 채움 공정
Through-Silicon-Via Filling Process Using Cu Electrodeposition
서울대학교 화학생물공학부, 08826 서울특별시 관악구 관악로 1
School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, 1, Gwanak-ro, Gwanak-gu, Seoul, 08826, Korea
jjkimm@snu.ac.kr
Korean Chemical Engineering Research, December 2016, 54(6), 723-733(11), 10.9713/kcer.2016.54.6.723 Epub 5 December 2016
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Abstract
반도체 배선 미세화에 의한 한계를 극복하기 위해 실리콘 관통 비아(through silicon via, TSV)를 사용한 소자의 3차원 적층에 대한 연구가 진행되고 있다. TSV 내부는 전해도금을 통해 구리로 채우며, 소자의 신뢰성을 확보하기 위해 결함 없는 TSV의 채움이 요구된다. TSV 입구와 벽면에서는 구리 전착을 억제하고, TSV 바닥에서 선택적으로 구리전착을 유도하는 바닥 차오름을 통해 무결함 채움이 가능하다. 전해 도금액에 포함되는 유기 첨가제는 TSV 위치에 따라 국부적으로 구리 전착 속도를 결정하여 무결함 채움을 가능하게 한다. TSV의 채움 메커니즘은 첨가제의 거동에 기반하여 규명되므로 첨가제의 특성을 이해하는 연구가 선행되어야 한다. 본 총설에서는 첨가제의 작용기작을 바탕으로 하는 다양한 채움 메커니즘, TSV 채움 효율을 개선하기 위한 평탄제의 개발과 3-첨가제 시스템에서의 연구, 첨가제 작용기와 도금 방법의 수정을 통한 채움 특성의 향상에 관한 연구를 소개한다.
Intensive researches have been focused on the 3-dimensional packaging technology using through silicon via (TSV) to overcome the limitation in Cu interconnection scaling. Void-free filling of TSV by the Cu electrodeposition is required for the fabrication of reliable electronic devices. It is generally known that sufficient inhibition on the top and the sidewall of TSV, accompanying the selective Cu deposition on the bottom, enables the void-free bottom-up filling. Organic additives contained in the electrolyte locally determine the deposition rate of Cu inside the TSV. Investigation on the additive chemistry is essential for understanding the filling mechanisms of TSV based on the effects of additives in the Cu electrodeposition process. In this review, we introduce various filling mechanisms suggested by analyzing the additives effect, research on the three-additive system containing new levelers synthesized to increase efficiency of the filling process, and methods to improve the filling performance by modifying the functional groups of the additives or deposition mode.
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Lim T, Koo HC, Kim KH, Park KJ, Kim MJ, Kwon OJ, Kim JJ, Electrochem. Solid State Lett., 14(9), D95 (2011)
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Park KJ, Kim MJ, Lim T, Koo HC, Kim JJ, Electrochem. Solid State Lett., 15(5), D26 (2012)
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Cho SK, Kim MJ, Kim JJ, Electrochem. Solid State Lett., 14(5), D52 (2011)
Zhu Y, Ma S, Sun X, Chen J, Miao M, Jin Y, Microelectron. Eng., 117, 8 (2014)
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Moffat TP, Bonevich JE, Huber WH, Stanishevsky A, Kelly DR, Stafford GR, Josell D, J. Electrochem. Soc., 147(12), 4524 (2000)
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Kondo K, Suzuki Y, Saito T, Okamoto N, Takauchi M, Electrochem. Solid State Lett., 13(5), D26 (2010)
Hayashi T, Kondo K, Saito T, Takeuchi M, Okamoto N, J. Electrochem. Soc., 158(12), D715 (2011)
Hayashi T, Kondo K, Saito T, Okamoto N, Yokoi M, Takeuchi M, Bunya M, Marunaka M, Tsuchiya T, J. Electrochem. Soc., 160(6), D256 (2013)
Sun JJ, Kondo K, Okamura T, Oh S, Tomisaka M, Yonemura H, Hoshino M, Takahashi K, J. Electrochem. Soc., 150, C355 (2003)
Luhn O, Van Hoof C, Ruythooren W, Celis JP, Electrochim. Acta, 54(9), 2504 (2009)
Casas JM, Alvarez F, Cifuentes L, Chem. Eng. Sci., 55(24), 6223 (2000)
Moffat TP, Josell D, J. Electrochem. Soc., 159(4), D208 (2012)
Josell D, Wheeler D, Moffat TP, J. Electrochem. Soc., 159(10), D570 (2012)
Wheeler D, Moffat TP, Josell D, J. Electrochem. Soc., 160(12), D3260 (2013)
Yang L, Radisic A, Deconinck J, Vereecken PM, J. Electrochem. Soc., 161(5), D269 (2014)
Josell D, Moffat TP, J. Electrochem. Soc., 160(12), D3035 (2013)
Josell D, Moffat TP, J. Electrochem. Soc., 162(3), D129 (2015)
Josell D, Moffat TP, J. Electrochem. Soc., 163(7), D322 (2016)
Luhn O, Radisic A, Vereecken PM, Van Hoof C, Ruythooren W, Celis JP, Electrochem. Solid State Lett., 12(5), D39 (2009)
Luhn O, Radisic A, Van Hoof C, Ruythooren W, Celis JP, J. Electrochem. Soc., 157(4), D242 (2010)
Hayase M, Otsubo K, J. Electrochem. Soc., 157(12), D628 (2010)
Matsuoka T, Otsubo K, Onishi Y, Amaya K, Hayase M, Electrochim. Acta, 82, 356 (2012)
Hayase M, Nagao M, J. Electrochem. Soc., 160(12), D3216 (2013)
Kim HC, Choe S, Cho JY, Lee D, Jung I, Cho WS, Kim MJ, Kim JJ, J. Electrochem. Soc., 162(3), D109 (2015)
Moffat TP, Wheeler D, Josell D, J. Electrochem. Soc., 151(4), C262 (2004)
Delbos E, Omnes L, Etcheberry A, Microelectron. Eng., 87, 514 (2010)
Tsai TH, Huang JH, J. Micromech. Microeng., 20, 115023 (2010)
Cao HY, Hang T, Ling HQ, Li M, J. Electrochem. Soc., 160(4), D146 (2013)
Yang L, Radisic A, Deconinck J, Vereecken PM, J. Electrochem. Soc., 160(12), D3051 (2013)
Kim MJ, Kim HC, Choe S, Cho JY, Lee D, Jung I, Cho WS, Kim JJ, J. Electrochem. Soc., 160(12), D3221 (2013)
Kim MJ, Seo Y, Kim HC, Lee Y, Choe S, Kim YG, Cho SK, Kim JJ, Electrochim. Acta, 163, 174 (2015)
Yanson YI, Rost MJ, Angew. Chem.-Int. Edit., 52, 2454 (2013)
Nagy Z, Blaudeau JP, Hung NC, Curtiss LA, Zurawski DJ, J. Electrochem. Soc., 142(6), L87 (1995)
Moffat TP, Yang LYO, J. Electrochem. Soc., 157(4), D228 (2010)
Feng ZV, Li X, Gewirth AA, J. Phys. Chem. B, 107(35), 9415 (2003)
Dow WP, Huang HS, Yen MY, Chen HH, J. Electrochem. Soc., 152(2), C77 (2005)
Kim HC, Kim MJ, Choe S, Lim T, Park KJ, Kim KH, Ahn SH, Kim SK, Kim JJ, J. Electrochem. Soc., 161(14), D749 (2014)
Kondo K, Yamada Y, Yokoi M, J. Electrochem. Soc., 162(8), D397 (2015)
Kim MJ, Seo Y, Oh JH, Lee Y, Kim HC, Kim YG, Kim JJ, J. Electrochem. Soc., 163(5), D185 (2016)
Kim MJ, Kim HC, Kim JJ, J. Electrochem. Soc., 163, D434 (2016)
Choe S, Kim MJ, Kim HC, Lim T, Park KJ, Kim KH, Ahn SH, Lee A, Kim SK, Kim JJ, J. Electroanal. Chem., 714-715, 85 (2014)
Choe S, Kim MJ, Kim KH, Kim HC, Jeon Y, Kim TY, Kim SK, Kim JJ, J. Electrochem. Soc., 163(2), D33 (2016)
Kim MJ, Cho SK, Koo HC, Lim T, Park KJ, Kim JJ, J. Electrochem. Soc., 157(11), D564 (2010)
Lu L, Shen Y, Chen X, Qian L, Lu K, Science, 304, 422 (2004)
Jin S, Wang G, Yoo B, J. Electrochem. Soc., 160(12), D3300 (2013)
Jin S, Seo S, Wang G, Yoo B, J. Nanosci. Nanotechnol., 16, 5410 (2016)
Hong SC, Lee WG, Kim WJ, Kim JH, Jung JP, Microelectron. Reliab., 51, 2228 (2011)
Zhu QS, Toda A, Zhang Y, Itoh T, Maeda R, J. Electrochem. Soc., 161(5), D263 (2014)
Kim MJ, Lim T, Park KJ, Cho SK, Kim SK, Kim JJ, J. Electrochem. Soc., 159(9), D538 (2012)
Kim MJ, Lim T, Park KJ, Kwon OJ, Kim SK, Kim JJ, J. Electrochem. Soc., 159(9), D544 (2012)
Kim MJ, Lim T, Park KJ, Kim SK, Kim JJ, J. Electrochem. Soc., 160(12), D3081 (2013)
Kim MJ, Lim T, Park KJ, Kim SK, Kim JJ, J. Electrochem. Soc., 160(12), D3088 (2013)
Wang Z, Wang H, Cheng P, Ding G, Zhao X, J. Micromech. Microeng., 24, 085013 (2014)
Kim HC, Kim MJ, Seo Y, Lee Y, Choe S, Kim YG, Cho SK, Kim JJ, ECS Electrochem. Lett., 4, D31 (2015)
