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Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received November 18, 2016
Accepted December 12, 2016

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Modeling on Hydrogen Effects for Surface Segregation of Ge Atoms during Chemical Vapor Deposition of Si on Si/Ge Substrates

Kee-Youn Yoo Hyunsik Yoon^†

Department of Chemical and Biomolecular Engineering, Seoul National University of Science & Technology, 232, Gongneung-ro, Nowon-gu, Seoul, 01811, Korea

Korean Chemical Engineering Research, April 2017, 55(2), 275-278(4), 10.9713/kcer.2017.55.2.275 Epub 31 March 2017

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Abstract

Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

Keywords

Silicon Germanium Segregation Hydrogen Chemical reaction

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