Articles & Issues
- Language
- english
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received January 28, 2019
Accepted March 5, 2019
- This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
Tuning of Electro-optical Properties of Nano-structured SnO2:Ga Powders in a Micro Drop Fluidized Reactor
Greenhouse Gas Laboratory, Korea Institute of Energy Research, Daejeon, 34129, Korea 1Department of Chemical Engineering, Chungnam National University, Daejeon, 34134, Korea 2Advanced Materials & Processing Center, Institute for Advanced Engineering, Yongin, 17180, Korea
Korean Chemical Engineering Research, April 2019, 57(2), 259-266(8), 10.9713/kcer.2019.57.2.259 Epub 5 April 2019
Download PDF
Abstract
Tuning of electro-optical properties of nano-structured SnO2:Ga powders in a micro drop fluidized reactor (MDFR) was highly effective to enhance the activities of powders to be used as sensor materials. The tuning was conducted continuously in a facile one-step process during the formation of powders. The microscopic hydrodynamic forces affected the band gap structure and charge transfer of SnO2:Ga powders through the oxygen and interfacial tin vacancies by providing plausible pyro-hydraulic conditions, which resulted in the decrease in the electrical resistance of the materials. The analyses of room-temperature photoluminescence (PL) spectra and FT-IR exhibited that the tuning could improve the surface activities of SnO2:Ga powders by adjusting the excitation as well as separation of electrons and holes, thus maximizing the oxygen vacancies at the surface of the powders. The scheme of photocatalytic mechanism of SnO2:Ga powders was also discussed.
Keywords
References
Wang H, Fu F, Zhang F, Wang HE, Kershaw SV, Xu J, Sun SG, Rogach AL, J. Mater. Chem., 22, 2140 (2012)
HanY, Wu X, Shen G, Dierre B, Gong L, Qu F, Bando Y, Sekiguchi T, Filippo F, Golberg D, J. Phys. Chem., 114(18), 8235 (2010)
Liu Y, Jiao Y, Zhang Z, Qu F, Umar A, Wu X, ACS Appl. Mater. Interfaces, 6(3), 2174 (2014)
Liu B, Cheng CW, Chen R, Shen ZX, Fan HJ, Sun HD, J. Phys. Chem. C, 114(8), 3407 (2010)
Gu F, Wang SF, Lu MK, Zhou GJ, Xu D, Yuan DR, J. Phys. Chem. B, 108(24), 8119 (2004)
Du J, He S, Zhao R, Chen S, Guo T, Wang H, Mater. Lett., 186, 318 (2017)
Bonu V, Das A, Prasad AK, Krishna NG, Dhara S, Tyagi AK, Appl. Phys. Lett., 105, 243102 (2014)
Wang L, Wang S, Wang Y, Zhang H, Kang Y, Huang W, Sens. Actuators B-Chem., 188, 85 (2013)
Hyodo T, Sasahara K, Shimizu Y, Egashira M, Sens. Actuators B-Chem., 106, 580 (2005)
Snaith HJ, Ducati C, Nano Lett., 10, 1259 (2010)
Dai SD, Yao ZL, Appl. Surf. Sci., 258(15), 5703 (2012)
Guo J, Zhang J, Ju D, Xu H, Cao B, Appl. Surf. Sci., 258, 5703 (2013)
Bhattacharjee A, Ahmaruzzaman M, Mater. Lett., 139, 418 (2014)
Guan Y, Wang D, Zhou X, Sun P, Wang H, Ma J, Lu G, Sens. Actuators B-Chem., 191, 45 (2014)
Ben W, Othmen H, Sdiri N, Elhouichet H, Ferid M, Mater. Sci. Semicond. Process, 52, 46 (2016)
Reddy PV, Reddy SV, Reddy BS, Mater. Today Proceedings, 3, 1752 (2016)
Xu X, Sun J, Zhang H, Wang Z, Dong B, Jiang T, Wang W, Li Z, Wang C, Sens. Actuators B-Chem., 160, 858 (2011)
Ahmed SF, Ghosh PK, Khan S, Mitra MK, Chattopadhyay KK, Appl. Phys. A-Mater. Sci. Process., 86, 139 (2007)
Fang LM, Zu XT, Li ZJ, Zhu S, Liu CM, Zhou WL, Wang LM, J. Alloy. Compd., 454, 261 (2008)
Nomura K, Okabayashi J, Okamura K, Yamada Y, Cit. J. Appl. Phys., 110, 83901 (2011)
Huang Z, Gao H, Wang Q, Zhao Y, Li G, Mater. Lett., 186, 231 (2017)
Huang H, Tian S, Xu J, Xie Z, Zeng D, Chen D, Shen G, Nanotechnology, 23, 105502 (2012)
Li Z, Zhou Y, Yu T, Liu J, Zou Z, Cryst Eng Comm., 14, 6462 (2012)
Mondal B, Basumatari B, Das J, Roychaudhury C, Saha H, Mukherjee N, Sens. Actuators B-Chem., 194, 389 (2014)
Tang W, Wang J, Yao P, Li X, Sens. Actuators B-Chem., 192, 543 (2014)
Wang H, Dou K, Teoh WY, Zhan Y, Hung TF, Zhang F, Xu J, Zhang R, Rogach AL, Adv. Funct. Mater., 23(38), 4847 (2013)
Lei M, Hu QR, Wang SL, Tang WH, Mater. Lett., 64, 19 (2009)
Cui S, Wen Z, Mattson EC, Mao S, Chang J, Weinert M, Hirschmugl CJ, Gajdardziska-Josifovska M, Chen J, J. Mater. Chem. A, 1(14), 4462 (2013)
Nilavazhagan S, Muthukumaran S, Superlattices Microstruct., 83, 507 (2015)
Wang WC, Tian YT, Li XJ, Wang XC, He H, Xu YR, He C, Appl. Surf. Sci., 261, 890 (2012)
Mazloom J, Ghodsi FE, Golmojdeh H, J. Alloy. Compd., 639, 393 (2015)
Niu M, Huang F, Cui L, Huang P, Yu Y, Wang Y, Nano, 4, 681 (2010)
Li ZR, Li XL, Zhang XX, Qian YT, J. Cryst. Growth, 291(1), 258 (2006)
Kaur J, Shah J, Kotnala RK, Verma KC, Ceram. Int., 38, 5563 (2012)
Manikandan D, Murugan R, Superlattices Microstruct., 89, 7 (2016)
Mohagheghi MB, Saremi MS, Semicond. Sci. Technol., 19, 764 (2004)
Cheng G, Wu K, Zhao PT, Cheng Y, He XL, Huang KX, J. Cryst. Growth, 309(1), 53 (2007)
Wang X, Fan H, Ren P, Colloids Surf. A: Physicochem. Eng. Asp., 419, 140 (2013)
Gurakar S, Serin T, Serin N, Adv. Mater. Lett., 5(6), 309 (2014)
Kim JH, Choi WC, Kim HY, Kang Y, Park YK, Powder Technol., 153(3), 166 (2005)
Kang Y, Lee CK, Kang GM, Lim DH, Yoo DJ, Korea Patent No. 10-1757424(2017).
Kang HW, Lim SN, Park SB, Int. J. Hydrog. Energy, 37(14), 10539 (2012)
Park GD, Cho JS, Kang YC, ACS Appl. Mater. Interfaces, 7, 16842 (2015)
Ko YN, Park SB, Jung KY, Kang YC, Nano Lett., 13, 5462 (2013)
Okuyama K, Lenggoro IW, Chem. Eng. Sci., 58(3-6), 537 (2003)
Hieda K, Hyodo T, Shimizu Y, Egashira M, Sens. Actuators B-Chem., 133, 144 (2008)
Kim WS, Kang Y, Kim YC, Korean Chem. Eng. Res., 19, 66 (2008)
Kang Y, Lee CK, Kang GM, Lim DH, Yoo DJ, Korea Patent No. 10-1765448(2017).
Yoo DJ, Lim DH, Kang Y, Lee CG, Kang GM, Mater. Chem. Phys., 183, 398 (2016)
Yoo DJ, Lim DH, Kang Y, Lee CG, Kang GM, J. Chem. Eng. Jpn., 50(1), 21 (2017)
Yang SW, Lim DH, Yoo DJ, Kang Y, Lee CG, Kang GM, Adv. Powder Technol., 29(3), 499 (2018)
Cheng B, Russell JM, Shi WS, Zhang L, Samulski ET, J. Am. Chem. Soc., 126(19), 5972 (2004)
Shannon RD, Acta. Cryst. A, 32, 751 (1976)
Jia AZ, Liang XQ, Su ZQ, Zhu T, Liu SX, J. Hazard. Mater., 178(1-3), 233 (2010)
Li F, Yu K, Lou LL, Su Z, Liu S, Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 172(2), 136 (2010)
Liu H, Cao W, Su Y, Wang Y, Wang X, Appl. Catal. B: Environ., 111, 271 (2011)
Yin XT, Guo XM, Sens. Actuators B-Chem., 200, 213 (2014)
Rani S, Roy SC, Bhatnagar MC, Sens. Actuators B-Chem., 122(1), 204 (2007)
Fukui K, Nakane M, Sens. Actuators B-Chem., 25(1-3), 486 (1995)
Zhang T, Liu L, Qi Q, Li S, Lu G, Sens. Actuators B-Chem., 139, 287 (2009)
Liu Z, Sun DD, Guo P, Leckie JO, Nano Lett., 7(4), 1081 (2007)
Kumar PSS, Manivel A, Anandan S, Water Sci. Technol., 59(7), 1423 (2009)
Wang H, Niu J, Long X, He Y, Ultrason. Sonochem., 15(4), 386 (2008)
Reddy CV, Babu B, Shim J, Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 223, 131 (2017)
Baranauskas V, Fontana M, Guo ZJ, Ceragioli HJ, Peterlevitz AC, Sens. Actuators B-Chem., 107, 474 (2005)
Gnanam S, Rajendran V, J. Sol-Gel Sci. Technol., 56, 128 (2010)
Long DA, “Infrared and Raman Characteristic Group Frequencies,” 3rded. Wiley, NY, (2001).
Farahani H, Wagiran R, Hamidon MN, Sensors, 14(5), 7881 (2014)
Bonu V, Das A, Amirthapandian S, Dhara S, Tyagi A, Phys. Chem. Chem. Phys., 17, 9774 (2015)
Chikhale LP, Patil JY, Rajgure AV, Shaikh FI, Mulla IS, Suryavanshi SS, Measurement, 57, 46 (2014)
Xiong Y, Zhang GZ, Zhang SP, Zeng DW, Xie CS, Mater. Res. Bull., 52, 56 (2014)
Vamathevan V, Amal R, Beydoun D, Low G, McEvoy S, J. Photochem. Photobiol., 148(1-3), 233 (2002)
HanY, Wu X, Shen G, Dierre B, Gong L, Qu F, Bando Y, Sekiguchi T, Filippo F, Golberg D, J. Phys. Chem., 114(18), 8235 (2010)
Liu Y, Jiao Y, Zhang Z, Qu F, Umar A, Wu X, ACS Appl. Mater. Interfaces, 6(3), 2174 (2014)
Liu B, Cheng CW, Chen R, Shen ZX, Fan HJ, Sun HD, J. Phys. Chem. C, 114(8), 3407 (2010)
Gu F, Wang SF, Lu MK, Zhou GJ, Xu D, Yuan DR, J. Phys. Chem. B, 108(24), 8119 (2004)
Du J, He S, Zhao R, Chen S, Guo T, Wang H, Mater. Lett., 186, 318 (2017)
Bonu V, Das A, Prasad AK, Krishna NG, Dhara S, Tyagi AK, Appl. Phys. Lett., 105, 243102 (2014)
Wang L, Wang S, Wang Y, Zhang H, Kang Y, Huang W, Sens. Actuators B-Chem., 188, 85 (2013)
Hyodo T, Sasahara K, Shimizu Y, Egashira M, Sens. Actuators B-Chem., 106, 580 (2005)
Snaith HJ, Ducati C, Nano Lett., 10, 1259 (2010)
Dai SD, Yao ZL, Appl. Surf. Sci., 258(15), 5703 (2012)
Guo J, Zhang J, Ju D, Xu H, Cao B, Appl. Surf. Sci., 258, 5703 (2013)
Bhattacharjee A, Ahmaruzzaman M, Mater. Lett., 139, 418 (2014)
Guan Y, Wang D, Zhou X, Sun P, Wang H, Ma J, Lu G, Sens. Actuators B-Chem., 191, 45 (2014)
Ben W, Othmen H, Sdiri N, Elhouichet H, Ferid M, Mater. Sci. Semicond. Process, 52, 46 (2016)
Reddy PV, Reddy SV, Reddy BS, Mater. Today Proceedings, 3, 1752 (2016)
Xu X, Sun J, Zhang H, Wang Z, Dong B, Jiang T, Wang W, Li Z, Wang C, Sens. Actuators B-Chem., 160, 858 (2011)
Ahmed SF, Ghosh PK, Khan S, Mitra MK, Chattopadhyay KK, Appl. Phys. A-Mater. Sci. Process., 86, 139 (2007)
Fang LM, Zu XT, Li ZJ, Zhu S, Liu CM, Zhou WL, Wang LM, J. Alloy. Compd., 454, 261 (2008)
Nomura K, Okabayashi J, Okamura K, Yamada Y, Cit. J. Appl. Phys., 110, 83901 (2011)
Huang Z, Gao H, Wang Q, Zhao Y, Li G, Mater. Lett., 186, 231 (2017)
Huang H, Tian S, Xu J, Xie Z, Zeng D, Chen D, Shen G, Nanotechnology, 23, 105502 (2012)
Li Z, Zhou Y, Yu T, Liu J, Zou Z, Cryst Eng Comm., 14, 6462 (2012)
Mondal B, Basumatari B, Das J, Roychaudhury C, Saha H, Mukherjee N, Sens. Actuators B-Chem., 194, 389 (2014)
Tang W, Wang J, Yao P, Li X, Sens. Actuators B-Chem., 192, 543 (2014)
Wang H, Dou K, Teoh WY, Zhan Y, Hung TF, Zhang F, Xu J, Zhang R, Rogach AL, Adv. Funct. Mater., 23(38), 4847 (2013)
Lei M, Hu QR, Wang SL, Tang WH, Mater. Lett., 64, 19 (2009)
Cui S, Wen Z, Mattson EC, Mao S, Chang J, Weinert M, Hirschmugl CJ, Gajdardziska-Josifovska M, Chen J, J. Mater. Chem. A, 1(14), 4462 (2013)
Nilavazhagan S, Muthukumaran S, Superlattices Microstruct., 83, 507 (2015)
Wang WC, Tian YT, Li XJ, Wang XC, He H, Xu YR, He C, Appl. Surf. Sci., 261, 890 (2012)
Mazloom J, Ghodsi FE, Golmojdeh H, J. Alloy. Compd., 639, 393 (2015)
Niu M, Huang F, Cui L, Huang P, Yu Y, Wang Y, Nano, 4, 681 (2010)
Li ZR, Li XL, Zhang XX, Qian YT, J. Cryst. Growth, 291(1), 258 (2006)
Kaur J, Shah J, Kotnala RK, Verma KC, Ceram. Int., 38, 5563 (2012)
Manikandan D, Murugan R, Superlattices Microstruct., 89, 7 (2016)
Mohagheghi MB, Saremi MS, Semicond. Sci. Technol., 19, 764 (2004)
Cheng G, Wu K, Zhao PT, Cheng Y, He XL, Huang KX, J. Cryst. Growth, 309(1), 53 (2007)
Wang X, Fan H, Ren P, Colloids Surf. A: Physicochem. Eng. Asp., 419, 140 (2013)
Gurakar S, Serin T, Serin N, Adv. Mater. Lett., 5(6), 309 (2014)
Kim JH, Choi WC, Kim HY, Kang Y, Park YK, Powder Technol., 153(3), 166 (2005)
Kang Y, Lee CK, Kang GM, Lim DH, Yoo DJ, Korea Patent No. 10-1757424(2017).
Kang HW, Lim SN, Park SB, Int. J. Hydrog. Energy, 37(14), 10539 (2012)
Park GD, Cho JS, Kang YC, ACS Appl. Mater. Interfaces, 7, 16842 (2015)
Ko YN, Park SB, Jung KY, Kang YC, Nano Lett., 13, 5462 (2013)
Okuyama K, Lenggoro IW, Chem. Eng. Sci., 58(3-6), 537 (2003)
Hieda K, Hyodo T, Shimizu Y, Egashira M, Sens. Actuators B-Chem., 133, 144 (2008)
Kim WS, Kang Y, Kim YC, Korean Chem. Eng. Res., 19, 66 (2008)
Kang Y, Lee CK, Kang GM, Lim DH, Yoo DJ, Korea Patent No. 10-1765448(2017).
Yoo DJ, Lim DH, Kang Y, Lee CG, Kang GM, Mater. Chem. Phys., 183, 398 (2016)
Yoo DJ, Lim DH, Kang Y, Lee CG, Kang GM, J. Chem. Eng. Jpn., 50(1), 21 (2017)
Yang SW, Lim DH, Yoo DJ, Kang Y, Lee CG, Kang GM, Adv. Powder Technol., 29(3), 499 (2018)
Cheng B, Russell JM, Shi WS, Zhang L, Samulski ET, J. Am. Chem. Soc., 126(19), 5972 (2004)
Shannon RD, Acta. Cryst. A, 32, 751 (1976)
Jia AZ, Liang XQ, Su ZQ, Zhu T, Liu SX, J. Hazard. Mater., 178(1-3), 233 (2010)
Li F, Yu K, Lou LL, Su Z, Liu S, Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 172(2), 136 (2010)
Liu H, Cao W, Su Y, Wang Y, Wang X, Appl. Catal. B: Environ., 111, 271 (2011)
Yin XT, Guo XM, Sens. Actuators B-Chem., 200, 213 (2014)
Rani S, Roy SC, Bhatnagar MC, Sens. Actuators B-Chem., 122(1), 204 (2007)
Fukui K, Nakane M, Sens. Actuators B-Chem., 25(1-3), 486 (1995)
Zhang T, Liu L, Qi Q, Li S, Lu G, Sens. Actuators B-Chem., 139, 287 (2009)
Liu Z, Sun DD, Guo P, Leckie JO, Nano Lett., 7(4), 1081 (2007)
Kumar PSS, Manivel A, Anandan S, Water Sci. Technol., 59(7), 1423 (2009)
Wang H, Niu J, Long X, He Y, Ultrason. Sonochem., 15(4), 386 (2008)
Reddy CV, Babu B, Shim J, Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 223, 131 (2017)
Baranauskas V, Fontana M, Guo ZJ, Ceragioli HJ, Peterlevitz AC, Sens. Actuators B-Chem., 107, 474 (2005)
Gnanam S, Rajendran V, J. Sol-Gel Sci. Technol., 56, 128 (2010)
Long DA, “Infrared and Raman Characteristic Group Frequencies,” 3rded. Wiley, NY, (2001).
Farahani H, Wagiran R, Hamidon MN, Sensors, 14(5), 7881 (2014)
Bonu V, Das A, Amirthapandian S, Dhara S, Tyagi A, Phys. Chem. Chem. Phys., 17, 9774 (2015)
Chikhale LP, Patil JY, Rajgure AV, Shaikh FI, Mulla IS, Suryavanshi SS, Measurement, 57, 46 (2014)
Xiong Y, Zhang GZ, Zhang SP, Zeng DW, Xie CS, Mater. Res. Bull., 52, 56 (2014)
Vamathevan V, Amal R, Beydoun D, Low G, McEvoy S, J. Photochem. Photobiol., 148(1-3), 233 (2002)