Articles & Issues
- Language
- korean
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received March 19, 2020
Accepted April 7, 2020
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
유리기판 박막화를 위한 습식공정에서 식각액 성분의 영향
Effects of Ingredients of Wet Etchant on Glass Slimming Process
강원대학교 화학생물공학부, 24341 강원도 춘천시 강원대학길 1
Devision of Chemical Engineering and Bioengineering, Kangwon National University, 1, Kangwondaehak-gil, Chuncheon-si, Gangwon-do, 24341, Korea
wglee@kangwon.ac.kr
Korean Chemical Engineering Research, August 2020, 58(3), 474-479(6), 10.9713/kcer.2020.58.3.474 Epub 30 July 2020
Download PDF
Abstract
유리기판의 박막화를 위한 식각액을 제조하였고, 습식 식각액의 주성분으로 HF를 사용하였다. HF를 기본으로 한식각액에 HCl, HNO3, H2SO4와 같은 강산과 구연산과 같은 카르복실산 그리고 여러 종류의 아미노산을 첨가물로 각각 사용한 식각액으로 유리의 식각속도와 표면형상의 변화를 측정하였다. 강산의 종류와 상관없이 첨가량이 증가함에 따라 선형적으로 유리의 식각속도가 증가하였으며 유리표면의 슬러지 제거효과도 나타내었다. HCl이 함유된 식각액이 식각속도의 증가율과 슬러지 제거 효과에서 다른 강산보다 효율적인 결과를 보였다. 카르복실산의 첨가는 식각속도에 영향을 크게 주지 않으나 슬러지 제거효과를 보였다. 하지만 아미노산을 첨가한 경우에는 식각속도의 변화와 슬러지 제거 효과가 크지 않았다.
The etching solution for slimming of glass substrates was manufactured and HF was used as the main ingredient of wet etching solutions. Various types of strong acids such as HCl, HNO3, H2SO4, amino acids and carboxylic acids such as citric acid, and etched solutions, respectively, were used to measure the etching rates and changes in surface shape of the glass. Regardless of the type of strong acids, the etching rate of the glass increased linearly as the added amount increased, and the sludge removal effect of the glass surface was also shown. The etching solution containing HCl showed more efficient results than other strong acids in the etching rate and the effect of removing sludge. The addition of carboxylic acid did not significantly affect the variation of etching rate, but had the effect of removing sludge. However, if amino acids were added, changes in etching rate and sludge removal were not significant.
Keywords
References
Takechi K, Eguchi T, Kanoh H, Ito T, Otsuki S, IEEE Trans. Semicond. Manuf., 18, 384 (2005)
Judge JS, J. Electrochem. Soc., 118, 1772 (1971)
Iliescu C, Chen B, Miao J, Sens. Actuators A-Phys., 143, 154 (2008)
Spierings GACM, J. Mat. Sci., 28, 6261 (1993)
Spierings G, Dijk J, J. Mat. Sci., 22, 1869 (1987)
Byun JY, J. Microelectronics & Packing Society, 15, 41-46(2008).
Lee CT, Appl. Chem. Eng., 27(1), 101 (2016)
Sujana MG, Thakur RS, Rao SB, J. Colloid Interface Sci., 206(1), 94 (1998)
Iliescu C, Jing J, Tay FE, Miao J, Sun T, Surf. Coat. Technol., 198, 314 (2005)
Steinert M, Acker J, Oswald S, Wetzig K, J. Phys. Chem. C, 111, 2133 (2007)
Steinert M, Acker J, Wetzig K, J. Phys. Chem. C, 112, 14139 (2008)
Yamamura K, Mitani T, Surf. Interface Anal., 40, 1011 (2008)
Tsai T, Wu Y, Microelectron. Eng., 83, 536 (2006)
Judge JS, J. Electrochem. Soc., 118, 1772 (1971)
Iliescu C, Chen B, Miao J, Sens. Actuators A-Phys., 143, 154 (2008)
Spierings GACM, J. Mat. Sci., 28, 6261 (1993)
Spierings G, Dijk J, J. Mat. Sci., 22, 1869 (1987)
Byun JY, J. Microelectronics & Packing Society, 15, 41-46(2008).
Lee CT, Appl. Chem. Eng., 27(1), 101 (2016)
Sujana MG, Thakur RS, Rao SB, J. Colloid Interface Sci., 206(1), 94 (1998)
Iliescu C, Jing J, Tay FE, Miao J, Sun T, Surf. Coat. Technol., 198, 314 (2005)
Steinert M, Acker J, Oswald S, Wetzig K, J. Phys. Chem. C, 111, 2133 (2007)
Steinert M, Acker J, Wetzig K, J. Phys. Chem. C, 112, 14139 (2008)
Yamamura K, Mitani T, Surf. Interface Anal., 40, 1011 (2008)
Tsai T, Wu Y, Microelectron. Eng., 83, 536 (2006)
