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Received March 19, 2017
Accepted May 21, 2017
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Effects of oxygen plasma generated in magnetron sputtering of ruthenium oxide on pentacene thin film transistors
Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Pohang 37673, Korea 1Department of Chemical and Biological Engineering, Sookmyung Women’s University, 100 Cheongpa-ro 47-gil, Seoul 04310, Korea
wkwon@sm.ac.kr
Korean Journal of Chemical Engineering, September 2017, 34(9), 2502-2506(5), 10.1007/s11814-017-0142-x
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Abstract
Effects of oxygen plasma generated in a sputtering process for deposition of electrodes on pentacene thin films to configure top-contact (TC) transistors have been thoroughly investigated. Reactive oxygen species severely degraded electrical properties of pentacene films during the deposition of RuOx electrodes, leading to a failure of devices. In the off-region, the leakage current increased by about two orders of magnitude, and the subthreshold slope also increased by 6.5 times. The top surface of pentacene films was oxidized by oxygen plasma and C-O and C=O bonds awerere created. The pentacenequinone derivative was confirmed by X-ray photoelectron spectroscopy. The oxidation of pentacene films gives rise to charge traps at the pentacene/electrode interface, which produces a leakage channel between source and drain electrodes. We believe that this side effect of oxygen plasma on the fabrication of TC-devices should be considered carefully.
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